Results 111 to 120 of about 842,343 (263)

Machine Learning Based Session Drop Prediction in LTE Networks and Its SON Aspects

open access: yesIEEE Vehicular Technology Conference, 2015
B. Daróczy, Péter Vaderna, A. Benczúr
semanticscholar   +1 more source

Polarization‐Independent Complex Bragg Grating Filters on Silicon Nitride

open access: yesLaser &Photonics Reviews, EarlyView.
This work demonstrates multi‐band polarization‐insensitive optical filters on the 400‐nm thick silicon nitride platform, complying with the LAN‐WDM standard. The filters are based on cladding‐modulated Bragg gratings with judiciously designed grating dimensions.
Alejandro Fernández‐Hinestrosa   +7 more
wiley   +1 more source

Calculating customer experience management index for telecommunication service using genetic algorithm based weighted attributes

open access: yes2018 IEEE International Conference on Innovative Research and Development (ICIRD), 2018
Nusratullah Khan   +3 more
semanticscholar   +1 more source

Monolithic Silicon Photonic Transceiver for 160 km Multi‐Channel Quantum Entanglement Distribution in Fiber Network

open access: yesLaser &Photonics Reviews, EarlyView.
The paper demonstrates a chip scale (4.5 x 4.5 mm2) silicon integrated system that is capable of distributing entangled photons over 160 km single mode fibers without dispersion compensations and external optical filters. The results highlight the potential for massive production and large‐scale deployed quantum integrated circuits for a future ...
Yue Qin, Hongnan Xu, Hon Ki Tsang
wiley   +1 more source

How zero price affects demand?: experimental evidence from the Moroccan telecommunication market [PDF]

open access: yes
To select one of several products (or to buy nothing) is a daily decision. Its foundations vary from one person to another and are based on perceptions, preferences, and other criteria.
Baddou, Meryem   +2 more
core   +1 more source

Vortex Beam Lasing from III‐V Nanowires Epitaxially Grown on Silicon‐on‐Insulator

open access: yesLaser &Photonics Reviews, EarlyView.
An epitaxially grown InGaAs nanowire photonic crystal laser on silicon‐on‐insulator is demonstrated to emit vortex beams carrying orbital angular momentum. Deforming the honeycomb lattice causes the band inversion effect and creates symmetry‐protected bound states in the continuum, enabling single‐mode lasing with a topological charge of −2 ...
Bogdan‐Petrin Ratiu   +7 more
wiley   +1 more source

High Performance Compatibilized Polyamide Composites Containing Graphene Nanoplatelets and Recycled Glass Fibers

open access: yesPolymer Composites, EarlyView.
Polyamide/graphene nanoplatelet composites for functional applications ABSTRACT Polyamide‐based composites reinforced with graphene nanoplatelets (GNPs) have exceptional potential as high‐performance functional materials. Non‐covalent modification with a trimellitic anhydride (TMA) coating agent improved the compatibility of the GNPs with polyamide 6 ...
Haritha Haridas   +6 more
wiley   +1 more source

Polish Mobile Phone Market - present situation and direction of changes [PDF]

open access: yes
The value of the polish mobile phone market (MPM) was rising steadily since its beginning. The year 2009 was the first year when the value of that market fell down by 2,5%.
Czaplewski, Maciej
core  

Nucleation and Propagation of Traveling Charge Domains in a Planar AlGaN/GaN Triode Structure

open access: yesphysica status solidi (a), EarlyView.
This work presents a novel model for the nucleation of charge domain instabilities in semiconductors exhibiting negative differential drift velocity, identifying diffusion as the key factor inhibiting domain formation. A planar Gunn triode structure is proposed which overcomes obstacles to the realization of GaN‐based Gunn effect devices with ...
Jonathan Sculley, P. Douglas Yoder
wiley   +1 more source

Impact of Parasitic Conductive Interfaces on the DC and RF Performance of GaN‐on‐GaN HEMTs

open access: yesphysica status solidi (a), EarlyView.
GaN‐on‐GaN HEMTs suffering from a parasitic conductive interface show a power added efficiency drop from an expected 50 % to 15 %. The interface forms on GaN wafers prior to epitaxy due to Si contamination to absorb RF power, introduce propagation loss and loading effects, reduce gain by 50 %, and fmax and Pout by 40 % compared to GaN‐on‐SiC HEMTs ...
Amer Bassal   +6 more
wiley   +1 more source

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