Results 81 to 90 of about 1,208,885 (201)

Electrocapillary Modulated Interfacial Tension Amplifies Liquid Metal Transduction

Advanced Functional Materials, EarlyView.
This study presented an electrocapillary‐enhanced magnetohydrodynamic pumping strategy that harnesses the Lorentz force and interfacial tension modulation of liquid metal droplets to achieve amplified fluidic power. The system enabled low‐voltage, self‐oscillating fluidic transduction with enhanced pressure and flow generation, supporting compact ...
Saba Firouznia, Ciqun Xu, Michael D. Dickey, Jonathan Rossiter   +3 more
wiley   +1 more source

Electrical Characteristics of Single, Double and Surround Gate Vertical MOSFETs with Reduced Overlap Capacitance

, 2003
The vertical MOSFET structure is one of the solutions for reducing the channel length of devices under 50nm. Surround gate structures can be realised which offer improved short channel effects and more channel with per unit silicon area. In this paper, a
Uchino, T, Donaghy, D, Ashburn, P, Gili, E, de Groot, C H, Hall, S, Kunz, V D   +6 more
core   +1 more source

Advances in Sustainable and Wearable Textile Based Soft Robotics

Advanced Functional Materials, EarlyView.
This Review examines advances in wearable textile‐based soft robotics, focusing on sustainable materials, integrated sensing, and scalable actuation. It discusses manufacturing and system integration across healthcare, assistive robotics, prosthetics, and human–machine interfaces, and highlights key challenges in circular design, including life‐cycle ...
Zahir Abbas, Marzia Dulal, Sophia K. Novoselov, Victoria K. Novoselov, Kostya S. Novoselov, Shaila Afroj, Nazmul Karim   +6 more
wiley   +1 more source

Fusogenic RNA Nanomodules for Fusion‐Mediated and Multiplexed siRNA Delivery

Advanced Functional Materials, EarlyView.
A fusogenic lipid‐layered RNA nanomodules (L‐CRAMs) enable high‐capacity and long‐lasting siRNA delivery through membrane fusion. These nanomodules carry exceptionally large siRNA payloads, avoid conventional endosomal uptake, and release multiple functional siRNAs through Dicer‐mediated processing.
Sunghyun Moon, Iksoo Jang, Taehyeon Kim, Nayoung Yoon, Kyuha Yum, Jong Bum Lee   +5 more
wiley   +1 more source

Ambient‐Stable Transparent P‐Type CuI Transistors Via Room‐Temperature Pulsed Laser Deposition

Advanced Functional Materials, EarlyView.
An in situ PLD fabricated AlOx${\rm AlO}_x$/CuI/AlOx${\rm AlO}_x$ sandwich structure enables stable CuI TFTs with a field‐effect mobility of 2.3 ±$\pm$ 0.7 cm2${\rm cm}^{2}$ V−1${\rm V}^{-1}$ s−1${\rm s}^{-1}$ and excellent ambient stability. Complementary inverters based on CuI:Rb and ZnO:Al exhibit rail‐to‐rail voltage transfer characteristics and an
Yang Chen, Susanne Selle, Michael S. Bar, Michael Lorenz, Holger von Wenckstern, Marius Grundmann   +5 more
wiley   +1 more source

Gate Capacitance of deep submicron MOSFETS with high-K gate dielectrics

, 2002
We study gate capacitance of deep submicron MOSFETs with high-K gate dielectrics. Schrödinger’s equation is solved by applying an open boundary condition at silicon-gate dielectric interface.
Haque, A, Hakim, MMA
core   +1 more source

Semiconducting Polymers Post‐Functionalized With Ureido‐Pyrimidinone for Robust Stretchable Transistors

Advanced Functional Materials, EarlyView.
The design of intrinsically robust stretchable semiconducting polymers was achieved through OTBS‐mediated post‐functionalization of PDPP2T side chains with UPy units, generating dual hydrogen‐bonding motifs comprising weaker urethane linkages and strong quadruple UPy interactions along the long alkyl side chain, which is crucial for achieving desirable
Dinda Bazliah, Livy Laysandra, Kosuke Terayama, Xingyu Yang, Atsushi Isobe, Tai‐Chin Chiang, Tsuyoshi Michinobu, Yu‐Cheng Chiu   +7 more
wiley   +1 more source

MoS2 based dual input logic AND gate

AIP Advances, 2016
Crystalline monolayers of CVD MoS2 are used as the active semiconducting channel in a split-gate field effect transistor. The device demonstrates logic AND functionality that is controlled by independently addressing each gate terminal with ±10V.
Luis M. Martinez, Nicholas J. Pinto, Carl H. Naylor, A. T. Charlie Johnson   +3 more
doaj   +1 more source

Multimode Oxide‐Based Optoelectronic Memtransistor for In‐Sensor Vision Processing

Advanced Functional Materials, EarlyView.
A multimode optoelectronic memtransistor (OEMT) is demonstrated for vision explainable artificial intelligence (VXAI) hardware. By integrating optical sensing, electrical masking, and non‐volatile memory, the device enables key operations required for generating saliency information.
Min Gu Lee, Geunyoung Kim, Hwa Young Kim, Do Hoon Kim, Hanchan Song, Huisu Noh, Jungwan Noh, Seungwoo Lee, Sang‐Hee Ko Park, Himchan Cho, Kyung Min Kim   +10 more
wiley   +1 more source

Reconfigurable binary and ternary logic devices enabling logic state modulation

Nature Communications
This paper reports a reconfigurable binary–ternary transistor with a controllable voltage range and current level for the intermediate logic state. The proposed functions were demonstrated using an indium–gallium–zinc-oxide channel with a dual-gate ...
Yonghyun Albert Kwon, Su Bin Park, Jaeyeon Kim, Youngjae Yoo, Seung Woo Lee, Jeong Ho Cho   +5 more
doaj   +1 more source