Results 41 to 50 of about 5,338 (231)
Here, the authors report the observation of deep-ultraviolet (DUV) electroluminescence and photocurrent generation in van der Waals heterostructures based on hBN crystals, showing potential for DUV light emitting and detection devices.
Su-Beom Song +12 more
doaj +1 more source
An O radical‐induced n‐to‐p transition in PbS quantum dots (QDs) is achieved via atmospheric Ar/O2 treatment, enabling favorable band alignment and stable photogating in PbS QD/IGZO phototransistors. Interfacial defect passivation and Fermi‐level modulation, confirmed by XPS and UPS analyses, effectively suppress dark current, induce a positive VTH ...
MD Redowan Mahmud Arnob +4 more
wiley +1 more source
1T1R‐arrays combining filamentary‐type memristors and CMOS transistors offer great potential for energy‐efficient analog hardware accelerators. Here, transient SET analysis of nanoscale HfO2 memristors integrated on 180 nm CMOS wafers is discussed.
Oliver Artner +11 more
wiley +1 more source
High‐Throughput Screening of Rare‐Earth Compounds as Promising Deep‐Ultraviolet Light Emitters
AlN and its alloys are the state‐of‐the‐art materials for deep‐ultraviolet (DUV) light emitting diodes (LEDs). The limited number of materials known acts as a bottleneck for the design of efficient DUV light emitters.
Xun Xu +5 more
doaj +1 more source
Novel metrology for the DUV photolithography sequence [PDF]
In-situ metrology promises to provide effective manufacturing line operation, reduced cycle times and improved process quality for semiconductor processing. The challenges in developing this technology lie in identifying useful and relatively simple observables in the lithography sequence, relating these observables to the final quantity of interest ...
Nickhil Jakatdar +4 more
openaire +1 more source
An explainable CatBoost model was trained to predict the bandgaps of 474 phosphate crystals based on composition and density descriptors. SHAP analysis identified two key variables—d‐electron‐count dispersion and atomic‐density dispersion—as the primary drivers of the model's predictions.
Wenhu Wang +3 more
wiley +1 more source
Scattering analysis of optical components in the DUV
Paper 61011HDriven by the increasing demands on optical components for DUV lithography, a system for angle resolved as well as total scatter measurements (ARS and TS respectively) at 193 nm and 157 nm has been developed at the Fraunhofer Institute in ...
Duparre, A., Schröder, S., Gliech, S.
core +1 more source
AlGaN-Based Multiple Quantum Well Deep Ultraviolet Light-Emitting Diodes With Polarization Doping
The characteristics of AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) with polarization-doped p-type layers were numerically analyzed.
Jianjun Chang +7 more
doaj +1 more source
Band-Engineered Structural Design of High-Performance Deep-Ultraviolet Light-Emitting Diodes
In this study, systematic structural design was investigated numerically to probe into the cross-relating influences of n-AlGaN layer, quantum barrier (QB), and electron-blocking layer (EBL) on the output performance of AlGaN deep-ultraviolet (DUV) light-
Jih-Yuan Chang +5 more
doaj +1 more source
Different wavelength photonic synapses are used for biomimetic visual applications. Abstract Bionic intelligent visual perception systems have significant application prospects in fields such as autonomous driving and robotics, medical imaging and auxiliary diagnosis, security and monitoring.
Longlong Jiang +6 more
wiley +1 more source

