Results 171 to 180 of about 154,418 (337)

A computationally effective dynamic hysteresis model taking into account skin effect in magnetic laminations

open access: green, 2013
Olivier de la Barrière   +5 more
openalex   +2 more sources

Furan‐Substituted Phosphine‐Oxide as an Efficient Interfacial Modifier for Wide‐Bandgap Perovskite Solar Cells

open access: yesAdvanced Functional Materials, EarlyView.
We report phosphine‐oxide interlayers for wide‐bandgap perovskite solar cells, in which tuned P = O Lewis basicity enables selective passivation of buried NiOx/perovskite interfaces and introduces interfacial dipoles that strengthen the built‐in field.
JeeHee Hong   +6 more
wiley   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

open access: yesAdvanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu   +5 more
wiley   +1 more source

Polymer Network Modified Perovskite for High‐Performance Pure Blue Light‐Emitting Diodes

open access: yesAdvanced Functional Materials, EarlyView.
A polymer network of poly(4‐vinylphenol) (PVPh) is introduced to improve pure blue perovskite light‐emitting diodes. PVPh effectively passivates defects, enhances film morphology, reduces lattice strain, and suppresses ion migration. These effects lead to record device performance, achieving 9.82% external quantum efficiency and stable blue emission at
Zhongkai Yu   +11 more
wiley   +1 more source

Hysteresis-free and dynamically resilient strain sensor enabled by interfacial coordination. [PDF]

open access: yesSci Adv
He J   +10 more
europepmc   +1 more source

Multi‐Functional ZnO–Te Heterojunction Devices Enabling Compact Frequency Quadrupler

open access: yesAdvanced Functional Materials, EarlyView.
Wafer‐scale ZnO–Te heterojunction devices featuring tunable double negative differential transconductance (D‐NDT) are demonstrated at ≤ 200°C. Leveraging this unique characteristic, a single‐stage frequency quadrupler is realized, achieving a 64%–75% reduction in device count.
Jae Hyeon Jun   +8 more
wiley   +1 more source

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