Results 61 to 70 of about 37,587 (299)

Identification of Hysteresis Functions Using a Multiple Model Approach [PDF]

open access: yes, 2001
This paper considers the identification of static hysteresis functions which describe phenomena in mechanical systems, piezoelectric actuators and materials.
Mihaylova, L   +3 more
core  

Laser‐Induced Graphene from Waste Almond Shells

open access: yesAdvanced Functional Materials, EarlyView.
Almond shells, an abundant agricultural by‐product, are repurposed to create a fully bioderived almond shell/chitosan composite (ASC) degradable in soil. ASC is converted into laser‐induced graphene (LIG) by laser scribing and proposed as a substrate for transient electronics.
Yulia Steksova   +9 more
wiley   +1 more source

Negative hysteresis in the behavioral dynamics of the affordance “graspable” [PDF]

open access: yesAttention, Perception, & Psychophysics, 2013
One commonly perceives whether a visible object will afford grasping with one hand or with both hands. In experiments in which differently sized objects of a fixed type are presented, the transition from using one of these manual modes to the other depends on the ratio of object size to hand span and on the presentation sequence, with size increasing ...
Lopresti-Goodman, Stacy M.   +2 more
openaire   +4 more sources

An analysis of the modified Dahl and Masing models: application to a belt tensioner [PDF]

open access: yes, 2007
The objective of this paper is to describe the modified Dahl and Masing models used for predicting hysteretic behavior, and tested on a belt tensioner for automotive engines. An experimental study with deflection imposed on the tensioner is first carried
Dufour, Regis   +3 more
core   +1 more source

Exploring Curvature Effects in Direct‐Written 3D Curved Hollow Magnetic Nanoshells

open access: yesAdvanced Functional Materials, EarlyView.
Fabricated by a hybrid FEBID/CVD method, 3D PtC/Co3Fe core–shell heterostructures with engineered curvature and shell thickness exhibit complex reversal modes with axially symmetric N'eel‐type domain walls. XMCD‐PEEM combined with full‐scale micromagnetic simulations reveal how curvature and thickness govern the domain wall energy landscape and shape ...
Oleksii M. Volkov   +10 more
wiley   +1 more source

A Digital Observer-Based Repetitive Learning Composite Control Method for Large Range Piezo-Driven Nanopositioning Systems

open access: yesMachines, 2022
In this study, a novel digital compound compensation method is proposed to compensate for the hysteresis nonlinearity and the drift disturbance of a piezoelectric nanopositioning system with a large range.
Cunhuan Liu   +3 more
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Comparative study of the metal insulator transition of a VO2 film with simultaneous infrared thermography and electric measurements

open access: yesAIP Advances, 2021
Metal–insulator transition (MIT) of a polycrystalline VO2 film was studied with simultaneous electric resistance and infrared thermographic measurements.
Baoshun Liu   +4 more
doaj   +1 more source

Dynamic Hysteresis in Cyclic Deformation of Crystalline Solids [PDF]

open access: yesPhysical Review Letters, 2012
The hysteresis or internal friction in the deformation of crystalline solids stressed cyclically is studied from the viewpoint of collective dislocation dynamics. Stress-controlled simulations of a dislocation dynamics model at various loading frequencies and amplitudes are performed to study the stress - strain rate hysteresis.
Laurson, L., Alava, M.J.
openaire   +4 more sources

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

open access: yesAdvanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu   +17 more
wiley   +1 more source

Home - About - Disclaimer - Privacy