Results 271 to 280 of about 5,522,348 (307)

The effects of diffuse and distinct affect.

Journal of Personality and Social Psychology, 2002
In a series of suboptimal priming studies, it was shown that both affective and nonaffective reactions to a stimulus may occur without awareness. Moreover, it was demonstrated that affective information is detected earlier than nonaffective information.
Stapel, D.A., Koomen, W, Ruijs, K.I
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THE EFFECT OF DIFFUSE LIGHT ON CROPS

Acta Horticulturae, 2008
Light is not evenly distributed in Dutch glass greenhouses, but this can be improved with diffuse light. Modern greenhouse coverings are able to transform most of the light entering the greenhouse into diffuse light. Wageningen UR Greenhouse Horticulture has studied the effect of diffuse light on crops for several years.
Hemming, S., Dueck, T.A., Janse, J., van Noort, F.R.   +3 more
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Effective diffusivity in transient state

The Journal of Chemical Physics, 2013
The effective diffusivity in a polymer matrix modified with inclusions is usually calculated based on Kalnin-Kotomin's model [J. R. Kalnin, E. A. Kotomin, and J. Maier, J. Phys. Chem. Solids 63, 449–456 (2002)]10.1016/S0022-3697(01)00159-7, which extends the well known Maxwell-Garnett formula.
Zbisław Tabor, Nowak, Paweł, Krzak, Małgorzata, Warszyński, Piotr   +3 more
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The effect of diffusion on the immunolocalization of antigen

Histopathology, 1987
Diffusion prior to tissue fixation may result in immunohistochemical localization of antigen at sites in which it does not occur in vivo. The extent and speed with which this may occur have been investigated with several antigens of different molecular weights in tissues which were left unfixed for various lengths of time.
W A, Reid, T, Branch, W D, Thompson, J, Kay   +3 more
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The effects of dislocations on diffusion in silicon

Physica Status Solidi (a), 1971
The influence of dislocations on diffusion in silicon has been studied by diffusing phosphorus and boron under an oxidizing environment into specimens containing a uniaxial array of edge dislocations. From measurements of junction depth it has been shown that enhanced diffusion relative to the perfect lattice occurs when the diffusion front is parallel
M. G. Howes, P. S. Dobson
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The Kirkendall effect in multiphase diffusion

Acta Materialia, 2004
Recently, the presence of two Kirkendall planes has been discovered in solid-state diffusion couples in various binary metallic systems in our laboratory, and in this work even three Kirkendall marker planes were found in a couple Ti/TiAl3. The bifurcation and trifurcation of the Kirkendall plane can quantitatively be described using the classical ...
Paul, A., Dal, van, M.J.H., Kodentsov, A., Loo, van, F.J.J.   +3 more
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Baro-Diffusion Effect on Diffusion Time

The Physics of Fluids, 1967
The evolution of the concentration distribution of a small quantity of a heavy gas diffusing in the steady flow field of a lighter gas is investigated. Two cases are treated: (1) the lighter parent gas is initially in rigid body rotation, (2) it is initially at rest under a strong body force.
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Ternary diffusion and effective diffusion coefficients in alveolar spaces

Respiration Physiology, 1980
An experimentally verified mathematical model of non-equimolar ternary gas diffusion is applied to simulate the conditions existing in the alveolar spaces. When a fictitious gas film is erected a certain distance away from the alveolar membrane, and when the compositions at the two boundaries of the film are, respectively, the alveolar gas composition ...
H K, Chang, L E, Farhi
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Effects of post-diffusion annealing on Zn-diffused GaAs:Si

Journal of Applied Physics, 1993
After Zn diffusion into Si-doped GaAs (n≊1.5×1018 cm−3), the Zn-diffused samples are annealed under different conditions: (i) in vacuum, (ii) in arsenic vapor, and (iii) with a Si3N4 mask capping the sample surface. The Zn concentration profiles obtained by secondary-ion-mass spectroscopy and the photoluminescence (PL) spectra taken at different depths
Ky, N. H., Ganiere, J. D., Reinhart, F. K., Blanchard, B., Pfister, J. C.   +4 more
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Dopant diffusion in silicides: Effect of diffusion paths

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1992
While dopants implanted in well annealed WSi2 show no lattice diffusion and only limited grain-boundary diffusion at temperatures up to 900 °C, on the contrary, rapid diffusion is observed at temperatures as low as 300 °C when the implantation takes place in the as-deposited amorphous silicide.
C. Stanis, O. Thomas, J. Cotte, A. Charai, F. K. LeGoues, F. M. d’Heurle   +5 more
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