Results 61 to 70 of about 279,086 (273)

Inelastic tunnel diodes [PDF]

open access: yes, 1984
Power is extracted from plasmons, photons, or other guided electromagnetic waves at infrared to midultraviolet frequencies by inelastic tunneling in metal-insulator-semiconductor-metal diodes.
Anderson, L. M.
core   +1 more source

High Voltage in Noble Liquids for High Energy Physics

open access: yes, 2014
A workshop was held at Fermilab November 8-9, 2013 to discuss the challenges of using high voltage in noble liquids. The participants spanned the fields of neutrino, dark matter, and electric dipole moment physics.
A Tomas   +15 more
core   +1 more source

Investigation of Laser Ablation and Brush Pre‐Treatments for AlCu Cold Roll Bonding in Oxygen‐Free Conditions

open access: yesAdvanced Engineering Materials, EarlyView.
It is shown that laser ablation pretreatment under oxygen‐free conditions enables copper–aluminium bonding at significantly lower deformation degrees and improved properties compared to mechanical brushing. Laser ablation further increases interface contact area and induces favourable residual stress states and microstructural compatibility ...
Khemais Barienti   +11 more
wiley   +1 more source

On the origin of off-state leakage current in n-p-n vertical structures for GaN-based trench-MOSFETs

open access: yesPower Electronic Devices and Components
In this work, we present the results of research on the off-current mechanism in vertical trench MOS devices manufactured on an ammonothermal substrate.
Maciej Kamiński   +18 more
doaj   +1 more source

Characterization of Nitinol Produced by Laser Powder Bed Fusion for Mechanical Metamaterial Applications

open access: yesAdvanced Engineering Materials, EarlyView.
Stabilization of L‐PBF Ni50.7Ti49.3 under low‐cycle loading was investigated. Recoverable strain after cycling was dependent on the amount of applied load. Recovery ratio was 53.4% and 35.1% at intermediate and high load, respectively. The maximum total strain reached 10.3% at a high load of 1200 MPa.
Ondřej Červinek   +5 more
wiley   +1 more source

Dynamic characteristics of neutral beam etching enabled normally-off recessed-gate GaN MOSHEMT

open access: yesPower Electronic Devices and Components
Dynamic performances of recessed-gate GaN metal oxide semiconductor high electron mobility transistors (MOSHEMTs) enabled by argon-based neutral beam etching (Ar-NBE) are comprehensively investigated.
Yitai Zhu   +8 more
doaj   +1 more source

Generator for a space power system Patent [PDF]

open access: yes, 1969
Design and development of electric generator for space power ...
Cooper, D. W., Kuhns, P. W.
core   +1 more source

A constructive approach to the special theory of relativity

open access: yes, 2009
Simple physical models of a measuring rod and of a clock are used to demonstrate the contraction of objects and clock retardation in special relativity. It is argued that the models could help in promoting student understanding of special relativity and ...
Miller, D. J.
core   +1 more source

Influence of an Argon/Silane Atmosphere on the Temperature of a Thermal Plasma

open access: yesAdvanced Engineering Materials, EarlyView.
The influence of a silane‐doped argon atmosphere on the chemical composition and temperature of a thermal nontransferring argon plasma is investigated using optical emission spectroscopy. As a result of the high amount of free electrons resulting from the stepwise ionization and dissociation of the silane molecule, even a silane addition of 0.01 vol ...
Lena Kreie   +4 more
wiley   +1 more source

Broadband method for precise microwave spectroscopy of superconducting thin films near the critical temperature

open access: yes, 2008
We present a high-resolution microwave spectrometer to measure the frequency-dependent complex conductivity of a superconducting thin film near the critical temperature.
Atsutaka Maeda   +3 more
core   +1 more source

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