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Space Charge Modulated Electrical Breakdown [PDF]
AbstractElectrical breakdown is one of the most important physical phenomena in electrical and electronic engineering. Since the early 20thcentury, many theories and models of electrical breakdown have been proposed, but the origin of one key issue, that the explanation for dc breakdown strength being twice or higher than ac breakdown strength in ...
Li, Shengtao +3 more
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Microwave breakdown of sub-atmospheric argon gas in the vicinity of a microgap
The microwave electric field at breakdown for argon gas in a microgap (generally, gap size
M. E. Castelan Hernandez +6 more
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Breakdown property of ±320 kV HVDC cable system XLPE/EPDM accessories
In high voltage direct current cable system, the cable joint and termination are the weakness to stand high voltage, thus making their breakdown strength the critical property to the reliability of power transmission system.
LIU Yongbin +5 more
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Electrical breakdown in tissue electroporation [PDF]
Electroporation, the permeabilization of the cell membrane by brief, high electric fields, has become an important technology in medicine for diverse application ranging from gene transfection to tissue ablation. There is ample anecdotal evidence that the clinical application of electroporation is often associated with loud sounds and extremely high ...
Guenther, Enric +4 more
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Size and temperature effects on dielectric breakdown of ferroelectric films
The paper introduces a model of dielectric breakdown strength. The model integrated thermal breakdown and defect models, representing the relationship between the electric field of ferroelectric films and dimensional parameters and operating temperature.
Sheng Tong
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Breakdown characteristics of combined air gaps under lightning impulse
With the increase of both voltage level and the transmission capacity, more attention has been paid to the external insulation of transmission lines.
Shaocheng Wu +6 more
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Indirectly Measured Ambient Electric Fields for Lightning Initiation in Fast Breakdown Regions
We report a new approach to measure indirectly the ambient thunderstorm electric fields in fast positive breakdown regions. For a given geometry of the discharged fast breakdown region, we show that there is a minimum ambient electric field required to ...
Steven A. Cummer
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Effect of Acceptor Traps in GaN Buffer Layer on Breakdown Performance of AlGaN/GaN HEMTs
In this paper, Silvaco TCAD software is used to simulate the buffer traps in AlGaN/GaN high electron mobility transistors (HEMTs), and its effects on the breakdown performance and key parameters of the devices are investigated by changing the position ...
Maodan Ma +11 more
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GaN/Si Heterojunction VDMOS with High Breakdown Voltage and Low Specific On-Resistance
A novel VDMOS with the GaN/Si heterojunction (GaN/Si VDMOS) is proposed in this letter to optimize the breakdown voltage (BV) and the specific on-resistance (Ron,sp) by Breakdown Point Transfer (BPT), which transfers the breakdown point from the high ...
Xin Yang, Baoxing Duan, Yintang Yang
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Parallel electric fields produced by ionospheric injection [PDF]
It is well known that there exists a thin layer in the lower boundary of the ionosphere between altitudes of 80 and 140 km in which collisional ions and collisionless electrons mix.
O. Saka
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