Results 11 to 20 of about 42,380 (312)
Breakdown property of ±320 kV HVDC cable system XLPE/EPDM accessories
In high voltage direct current cable system, the cable joint and termination are the weakness to stand high voltage, thus making their breakdown strength the critical property to the reliability of power transmission system.
LIU Yongbin +5 more
doaj +1 more source
Size and temperature effects on dielectric breakdown of ferroelectric films
The paper introduces a model of dielectric breakdown strength. The model integrated thermal breakdown and defect models, representing the relationship between the electric field of ferroelectric films and dimensional parameters and operating temperature.
Sheng Tong
doaj +1 more source
Space Charge Modulated Electrical Breakdown [PDF]
AbstractElectrical breakdown is one of the most important physical phenomena in electrical and electronic engineering. Since the early 20thcentury, many theories and models of electrical breakdown have been proposed, but the origin of one key issue, that the explanation for dc breakdown strength being twice or higher than ac breakdown strength in ...
Li, Shengtao +3 more
openaire +4 more sources
Breakdown characteristics of combined air gaps under lightning impulse
With the increase of both voltage level and the transmission capacity, more attention has been paid to the external insulation of transmission lines.
Shaocheng Wu +6 more
doaj +1 more source
Short-term Breakdown and Long-term Failure in Nanodielectrics: A Review [PDF]
Nanodielectrics, which are concentrated in polymer matrix incorporating nanofillers, have received considerable attention due to their potential benefits as dielectrics.
Yunxa Zhang +15 more
core +1 more source
Pre-breakdown Characteristics of Contaminated Power Transformer Oil [PDF]
In this paper we have studied pre-breakdown characteristics of transformer oil in the presence of different levels of contamination. The contaminant is fibrous dust from pressboard insulation used for high voltage transformers.
Zuber, H M +3 more
core +1 more source
GaN/Si Heterojunction VDMOS with High Breakdown Voltage and Low Specific On-Resistance
A novel VDMOS with the GaN/Si heterojunction (GaN/Si VDMOS) is proposed in this letter to optimize the breakdown voltage (BV) and the specific on-resistance (Ron,sp) by Breakdown Point Transfer (BPT), which transfers the breakdown point from the high ...
Xin Yang, Baoxing Duan, Yintang Yang
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Effect of Acceptor Traps in GaN Buffer Layer on Breakdown Performance of AlGaN/GaN HEMTs
In this paper, Silvaco TCAD software is used to simulate the buffer traps in AlGaN/GaN high electron mobility transistors (HEMTs), and its effects on the breakdown performance and key parameters of the devices are investigated by changing the position ...
Maodan Ma +11 more
doaj +1 more source
Due to the breakdown of the test-side fracture during the non-outage voltage-withstand test, the double-fracture disconnect switch (DDS) with a common chamber structure has been exposed to the risk of affecting the insulation performance of the operating-
Zifan DONG +5 more
doaj +1 more source
The widely distributed interconnects in printed circuit boards (PCBs) easily couple with high voltage under the action of electromagnetic pulses, which leads to insulation failure.
Quan Zhou +6 more
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