Results 191 to 200 of about 1,745,091 (321)

Domain‐Wall‐Free Sliding Ferroelectricity in Fully Commensurate 3R Transition Metal Dichalcogenide Bilayers

Advanced Functional Materials, EarlyView.
It is reported that the ferroelectric switching behavior of rhombohedral (3R) phase transition metal dichalcogenide (TMD) bilayers strongly depends on their domain structures. Single‐domain TMDs (SD‐TMDs) with domain‐wall‐free structures exhibit robust and stable polarization switching, whereas poly‐domain TMDs (PD‐TMDs) with randomly distributed ...
Ji‐Hwan Baek, Seong Chul Hong, Jinwoo Kim, Hyeongseok Lee, Hyun Woo Jeong, Kenji Watanabe, Takashi Taniguchi, Min Hyuk Park, Gwan‐Hyoung Lee   +8 more
wiley   +1 more source

Distribution of relaxation times as a tool to monitor tissue electroporation. [PDF]

Sci Rep
Le Berre T, Voyer D, Rival G, Frénéa-Robin M, Marchalot J.   +4 more
europepmc   +1 more source

Electrical Capacitance Tomography — from Design to Applications

Measurement and Control, 1995
Yang, W.Q., Beck, M.S., Byars, M.
openaire   +4 more sources

Tuning the Electronic Structure and Spin State of Fe─N─C Catalysts Using an Axial Oxygen Ligand and Fe Clusters for High‐Efficiency Rechargeable Zinc–Air Batteries

Advanced Functional Materials, EarlyView.
A FeN4─O/Clu@NC‐0.1Ac catalyst containing atomically‐dispersed FeN4─O sites (medium‐spin Fe2+) and Fe clusters delivered a half‐wave potential of 0.89 V for ORR and an overpotential of 330 mV at 10 mA cm−2 for OER in 0.1 m KOH. When the catalyst was used in a rechargeable Zn–air battery, a power density of 284.5 mW cm−2 was achieved with excellent ...
Yongfang Zhou, Yu Mao, Mengyao Chang, Ziyun Wang, Wenke Xie, Cuizhu Ye, Shanghai Wei, Lars Thomsen, Geoffrey I. N. Waterhouse   +8 more
wiley   +1 more source

Regression analysis of capacitance transients : a method to obtain information on the electric structure of thin-film solar cells [PDF]

, 2014
Lauwaert, Johan, Van Puyvelde, Lisanne, Vrielinck, Henk   +2 more
core  

Powering the Future: A Cobalt‐Based Catalyst for Longer‐Lasting Zinc–Air Batteries

Advanced Functional Materials, EarlyView.
A novel N‐doped graphitic shell‐encapsulated Co catalyst reveals superior bifunctional ORR/OER activity in alkaline media, empowering outstanding liquid and quasi‐solid‐state ZAB activity. The system delivers long‐term durability, a peak power density of 127 mW cm−2 and successfully powers an LED and a mini fan.
Manami Banerjee, Peng Ren, Greesh Kumar, Lucie Lindenbeck, Byoung Joon Park, Anna Rokicińska, Piotr Kuśtrowski, Adam Slabon, Francesco Ciucci, Ramendra Sundar Dey, Shoubhik Das   +10 more
wiley   +1 more source

Impact of bending deformation on a capacitive power transfer system. [PDF]

Sci Rep
Peirens K, Minnaert B, Chevalier A.
europepmc   +1 more source

Atomically Revealing Bulk Point Defect Dynamics in Hydrogen‐Driven γ‐Fe2O3 → Fe3O4 → FeO Transformation

Advanced Functional Materials, EarlyView.
In situ TEM uncovers the atomic‐scale mechanisms underlying hydrogen‐driven γ‐Fe2O3→Fe3O4→FeO reduction. In γ‐Fe2O3, oxygen vacancies cluster around intrinsic Fe vacancies, leading to nanopore formation, whereas in Fe3O4, vacancy aggregation is suppressed, preserving a dense structure.
Yupeng Wu, Dongxiang Wu, Wenhui Zhu, Xiaobo Chen, Zhikang Zhou, Zhilu Liang, Shuonan Ye, Meng Li, Xiao Tong, Kim Kisslinger, Sooyeon Hwang, Dmitri Zakharov, Renu Sharma, Judith C. Yang, Guangwen Zhou   +14 more
wiley   +1 more source

Universal Neuromorphic Element: NbOx Memristor with Co‐Existing Volatile, Non‐Volatile, and Threshold Switching

Advanced Functional Materials, EarlyView.
A W/NbOx/Pt memristor demonstrates the coexistence of volatile, non‐volatile, and threshold switching characteristics. Volatile switching serves as a reservoir computing layer, providing dynamic short‐term processing. Non‐volatile switching, stabilized through ISPVA, improves reliable long‐term readout. Threshold switching operates as a leaky integrate
Ungbin Byun, Hyesung Na, Sungjun Kim
wiley   +1 more source

Performance Analysis and Optimization of an InGaAs/GaAsSb Heterojunction Dopingless Tunnel FET with a Heterogate Dielectric. [PDF]

Micromachines (Basel)
Huang J, Liu H, Chen S, Wang S, Chong C, Liu C.   +5 more
europepmc   +1 more source