Results 171 to 180 of about 66,524 (310)

Spin‐Split Edge States in Metal‐Supported Graphene Nanoislands Obtained by CVD

open access: yesAdvanced Materials, EarlyView.
Combining STM measurements and ab‐initio calculations, we show that zig‐zag edges in graphene nanoislands grown on Ni(111) by CVD retrieve their spin‐polarized edge states after intercalation of a few monolayers of Au. ABSTRACT Spin‐split states localized on zigzag edges have been predicted for different free‐standing graphene nanostructures.
Michele Gastaldo   +6 more
wiley   +1 more source

Atomistic Mechanisms Triggered by Joule Heating Effects in Metallic Cu‐Bi Nanowires for Spintronics

open access: yesAdvanced Materials, EarlyView.
Bi doped metallic Cu nanowires are promising for spintronics thanks to the stabilization of a giant spin Hall effect. However, heat resulting from current injection forces Bi to leave solution, forcing segregation into monoatomic decorations which evolve into coherent crystalline aggregates.
Alejandra Guedeja‐Marrón   +6 more
wiley   +1 more source

Effect of electrode shape, gap and moisture on dielectric breakdown of transformer oil

open access: yes, 1996
IEEEProceedings of the 1996 IEEE 12th International Conference on Conduction & Breakdown in Dielectric Liquids, ICDL'96 -- 15 July 1996 through 19 July 1996 -- Roma, Italy -- 45784Dielectric liquids have been using as an insulator more than a century ...
Yilmaz H., Guler S.
core  

Universal Conductance Fluctuations in Quantum Anomalous Hall Insulators

open access: yesAdvanced Materials, EarlyView.
Universal conductance fluctuations are observed in mesoscopic quantum anomalous Hall insulators. Two distinct fluctuation patterns are identified, arising from different interference processes of bulk and chiral edge states, respectively. These findings unveil rich quantum interference phenomena in quantum anomalous Hall insulators and provide insights
Peng Deng   +11 more
wiley   +1 more source

Electrical Breakdown Strength of Alumina Single Crystal and Ceramics

open access: yes, 2006
Electrical breakdown strength (BDS) of alumina (Al2O3) single crystal and polycrystalline ceramics was measured to study the electrical breakdown mechanisms of these materials.
Dogan, Fatih   +2 more
core  

Topology and Material Optimization in Ultra‐Soft Magneto‐Active Structures: Making Advantage of Residual Anisotropies

open access: yesAdvanced Materials, EarlyView.
Residual magnetization induces pronounced mechanical anisotropy in ultra‐soft magnetorheological elastomers, shaping deformation and actuation even without external magnetic fields. This study introduces a computational‐experimental framework integrating magneto‐mechanical coupling into topology optimization for designing soft magnetic actuators with ...
Carlos Perez‐Garcia   +3 more
wiley   +1 more source

Self‐Assembled Monolayers in p–i–n Perovskite Solar Cells: Molecular Design, Interfacial Engineering, and Machine Learning–Accelerated Material Discovery

open access: yesAdvanced Materials, EarlyView.
This review highlights the role of self‐assembled monolayers (SAMs) in perovskite solar cells, covering molecular engineering, multifunctional interface regulation, machine learning (ML) accelerated discovery, advanced device architectures, and pathways toward scalable fabrication and commercialization for high‐efficiency and stable single‐junction and
Asmat Ullah, Ying Luo, Stefaan De Wolf
wiley   +1 more source

Large‐Area 2D Metasurface‐Based Triboelectric E‐Skin Arrays: Contact & Proximity Tactile Mapping with Broadband Acoustic Readouts

open access: yesAdvanced Materials, EarlyView.
Metasurface‐engineered NC‐TENG arrays integrate tactile pressure mapping, non‐contact gesture sensing, and acoustic signal readouts in one ultrathin module, and outperforms pristine PDMS in terms of electrical output and real‐time spatial mapping for next‐gen wearables.
Injamamul Arief   +12 more
wiley   +1 more source

Correlated Charge Transport in an Organic Coulomb Glass

open access: yesAdvanced Materials, EarlyView.
ABSTRACT Advances in the development of organic field‐effect transistors (OFETs), electrically gated organic semiconductors (EGOFETs), and organic electrochemical transistors (OECTs) allow for the operation of these devices at very high charge‐carrier densities, where Coulomb interactions between carriers can be expected to become significant.
Magdalena Sophie Dörfler   +3 more
wiley   +1 more source

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