Results 301 to 310 of about 343,105 (330)
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Journal of Applied Physics, 1950
The breakdown potential of a new gas, CSF8, has been measured over the range from pδ=4 to 200 mm×cm under conditions approximating plane-parallel geometry. A comparison of breakdown in air Freon-12 and CSF8 in the same apparatus indicates the ratio of the strengths of these gases to be approximately 1:2:3, respectively.
Ronald Geballe, Fred S. Linn
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The breakdown potential of a new gas, CSF8, has been measured over the range from pδ=4 to 200 mm×cm under conditions approximating plane-parallel geometry. A comparison of breakdown in air Freon-12 and CSF8 in the same apparatus indicates the ratio of the strengths of these gases to be approximately 1:2:3, respectively.
Ronald Geballe, Fred S. Linn
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Journal of Electrostatics, 1979
J M Meek and J D Craggs (eds) 1978 Chichester: John Wiley x + 878 pp price £35 The well known compendious postgraduate text of 1953 has suffered a complete metamorphosis except for the title. Surprisingly, the former authors, now wearing editors' hats, invited nine contributors to compose 11 new chapters.
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J M Meek and J D Craggs (eds) 1978 Chichester: John Wiley x + 878 pp price £35 The well known compendious postgraduate text of 1953 has suffered a complete metamorphosis except for the title. Surprisingly, the former authors, now wearing editors' hats, invited nine contributors to compose 11 new chapters.
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Electrically Stimulated Membrane Breakdown
1996The first sign of cell exposure to electrical pulses (strength in Kilovolts per Centimeter and duration in microseconds to milliseconds) is loss of the membrane permeation barrier against ions and small molecules. These permeability changes may be rapidly reversible or irreversible depending on the intensity and the width of the electrical pulses, as ...
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Electrical breakdown at semiconductor grain boundaries
Physical Review B, 1986Carrier transport through electrically active grain boundaries is studied under high-electric-field conditions. Electrons trapped at the interface and screened by ionized shallow and deep bulk defects are responsible for the formation of double Schottky barriers which reduce the carrier flow by several orders of magnitude.
, Blatter, , Greuter
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Electrical Breakdown in Vacuum
IEEE Transactions on Electrical Insulation, 1985In this paper vacuum breakdown phenomena are reviewed in two parts. The first considers the development of thought concerning electrical breakdown in vacuum with particular regard to field emission, interaction of cathode emission at the anode, and particle effects, including impurities.
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Electrical breakdown by tracking
Proceedings of the IEE - Part B: Electronic and Communication Engineering, 1962When an electrically stressed insulating material is exposed to conditions which contaminate its surfaces, the tendency for the resultant transient leakage currents to form conducting tracks on insulator surfaces is of recognized importance. This form of failure is known as tracking and the processes leading to its development are very dependent on the
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2023
Abstract The process of formation of anodic electrical breakdown in the crystal structure of ice and liquid water is considered within the framework of the mechanism of generation of free charge carriers through interatomic Auger transitions in the valence band of the dielectric.
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Abstract The process of formation of anodic electrical breakdown in the crystal structure of ice and liquid water is considered within the framework of the mechanism of generation of free charge carriers through interatomic Auger transitions in the valence band of the dielectric.
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Electrical Breakdown and the Breakdown Formalism
2022James U. Gleaton +4 more
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Physics Bulletin, 1974
J A Rees (ed) London: Macmillan 1973 pp ix + 294 price £7.95 For one's eight pounds one does not, as might be expected, get a heavy addition to the row of numerous, excellent texts on this important field. In fact Dr Rees has merely selected a number of pieces from its literature of the last three quarters of a century, with a page or so of commentary ...
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J A Rees (ed) London: Macmillan 1973 pp ix + 294 price £7.95 For one's eight pounds one does not, as might be expected, get a heavy addition to the row of numerous, excellent texts on this important field. In fact Dr Rees has merely selected a number of pieces from its literature of the last three quarters of a century, with a page or so of commentary ...
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Electrical Breakdown in Semiconductors
Physica Status Solidi (a), 1971Sudha Mahadevan, S. M. Hardas, G. Suryan
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