Results 221 to 230 of about 1,468,797 (312)

Additive Manufacturing of NiTi Shape Memory Alloys for Elastocaloric Applications: A Review

open access: yesAdvanced Functional Materials, EarlyView.
Additive manufacturing enables complex NiTi architectures that overcome key limitations in elastocaloric refrigeration, including poor heat transfer and high mechanical work input. This review surveys recent advances in LPBF‐ and DED‐fabricated NiTi shape memory alloys for elastocaloric applications, highlighting process–structure–performance ...
Ignatius Andre Setiawan   +7 more
wiley   +1 more source

Maximising environmental savings from silicon photovoltaics manufacturing to 2035. [PDF]

open access: yesNat Commun
Willis BL   +6 more
europepmc   +1 more source

Interfacial and Crystallographic Regulation of Zinc Anode via Electric Double Layer Reconstruction for Highly Stable Zn Anode

open access: yesAdvanced Functional Materials, EarlyView.
Trace amounts of perfluoro‐1‐butanesulfonyl fluoride enables the regulation of the Zn/electrolyte interface by the generated zincophilic ─SO3H groups with long hydrophobic ─CF2 tails, which adsorb strongly onto the Zn surface, displace water molecules from the inner Helmholtz plane, and reconstruct the electrical double‐layer structure.
Dinesh Patel   +3 more
wiley   +1 more source

4D‐Printed Magneto‐Plasmonic Microrobots for Programmable Spatiotemporal De‐Icing

open access: yesAdvanced Functional Materials, EarlyView.
A 4D‐printing strategy is introduced to achieve programmable de‐icing devices. By aligning gold–magnetite nanofillers within a photosensitive resin, the printed structures exhibit dual magnetic and plasmonic functionalities, enabling precise spatio‐temporal ice removal through thermoplasmonic effects.
Amélie Pérot   +7 more
wiley   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

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