Results 201 to 210 of about 664,482 (299)

A patient-specific, 3D printed neurostimulator enabling focal transcranial electrical stimulation and EEG at home. [PDF]

open access: yesJ Neuroeng Rehabil
Joodaki M   +11 more
europepmc   +1 more source

Influence of the Oxygen Plasma Treatment on Carbon Electrode and Capacity of Supercapacitors

open access: diamond, 2014
Žydrūnas Kavaliauskas   +2 more
openalex   +1 more source

Single‐Step Synthesis of In‐plane 1T'‐2H Heterophase MoTe2 for Low‐Resistance Contacts

open access: yesAdvanced Functional Materials, EarlyView.
A single‐step CVD method is developed to synthesize seamless in‐plane 1T'‐2H MoTe2 heterophase junctions with precise phase control and uniform large‐area coverage. The resulting transistors, incorporating 1T' MoTe2 contacts and 2H MoTe2 channels, exhibit ultralow contact resistance, offering a scalable solution to the long‐standing challenge of ...
Ye Lin   +9 more
wiley   +1 more source

Transparent Inorganic–Organic Bilayer Neural Electrode Array and Integration to Miniscope System for In Vivo Calcium Imaging and Electrophysiology

open access: yesAdvanced Functional Materials, EarlyView.
This study presents the BioCLEAR system, a highly transparent and conductive neural electrode array composed of silver nanowires (AgNWs) and doped PEDOT:PSS, enabling neural recordings with minimal optical artifacts. When integrated with a GRIN lens, this cost‐effective neural implant allows simultaneous electrophysiological recording and GCaMP6‐based ...
Dongjun Han   +17 more
wiley   +1 more source

Boosting the Energy Density of “Anode‐Free” Lithium Metal Batteries via Electrospun Polymeric Scaffolds

open access: yesAdvanced Functional Materials, EarlyView.
While host structures are known to enhance the reversibility and safety of lithium metal deposition, their additional volume and weight often decrease the battery's energy density and specific energy. By combining a lightweight and porous scaffold of electrospun polymer with a thinner separator, this article demonstrates a simultaneous improvement of ...
Lennart Wichmann   +6 more
wiley   +1 more source

Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System

open access: yesAdvanced Functional Materials, EarlyView.
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang   +6 more
wiley   +1 more source

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