Results 231 to 240 of about 24,594 (294)
Nanostructural engineering presents an opportunity for next-generation multi-dimensional camouflage. [PDF]
Wei B, Du J.
europepmc +1 more source
Updatable Closed‐Form Evaluation of Arbitrarily Complex Multiport Network Connections
The inverse design of electrically large wave devices often uses reduced‐order multiport models with discrete optimization, requiring many evaluations of complex interconnections between subsystems that differ only in a few blocks. This paper introduces a closed‐form framework enabling efficient Woodbury low‐rank updates of related, previous ...
Hugo Prod'homme, Philipp del Hougne
wiley +1 more source
Point-Line Conductive Networks via Carbon Black/Multi-Walled Carbon Nanotube Hybrid Fillers and Surfactant Modification in Silicone Rubber Electromagnetic Shielding Composites. [PDF]
Cheng Y +5 more
europepmc +1 more source
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley +1 more source
Broadband Infrared Absorption Features of Metasurfaces Constructed with a Titanium-Dielectric-Titanium Array Architecture. [PDF]
Zhang C +7 more
europepmc +1 more source
An experimentally validated optoelectronic device model is presented to describe the efficiency and roll‐off behavior of single‐layer TADF OLEDs. By coupling charge transport, exciton dynamics, and optical outcoupling, the model reproduces the External Quantum Efficiency (EQE) across different emission layer thicknesses and temperatures, offering ...
Jawid Nikan +4 more
wiley +1 more source
In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar +9 more
wiley +1 more source
Nonmonotonic Enhancement of Electro‐Optic Properties of Wurtzite AlN Thin Films by Sc Doping
EO coefficient, rc, for Sc‐AlN thin films in comparison with that for Mg ZnO thin films (left). Calculated electric field intensity of the fundamental mode supported by the active area that includes Sc‐AlN (right). ABSTRACT Wurtzite ferroelectrics, such as Sc‐doped AlN, have recently attracted considerable attention for their potential in realizing ...
K. Abe +11 more
wiley +1 more source

