Results 231 to 240 of about 21,175 (304)

Intercalation‐Induced Phase Transitions in Ferroelectric α‐In2Se3

Advanced Science, EarlyView.
Using the electrolyte gating technique, the van der Waals ferroelectric semiconductor α‐In2Se3 undergoes a series of transitions from a ferroelectric semiconductor to a dirty metal and finally to a metal, accompanied by a structural transformation. Concurrently, the ferroelectric hysteresis window progressively narrows and eventually disappears with ...
Xin He, Zhihao Gong, Tao Wang, Baoyu Wang, Chen Liu, Ding Wang, Yinchang Ma, Pu Feng, Chenhui Zhang, Weijin Hu, Kai Liu, Hua Wang, Xixiang Zhang   +12 more
wiley   +1 more source

Developments in Nanopatterning of Graphene; Toward Direct Writing. [PDF]

Adv Mater
Abrahamczyk S, Sakreida O, Bachmatiuk A, Martynková GS, Rümmeli MH.   +4 more
europepmc   +1 more source

Planar Josephson junctions and arrays by electron beam lithography and ion damage

, 2005
Shane A. Cybart
openalex   +1 more source

Imperfection in Semiconductors Leading to High Performance Devices

Advanced Science, EarlyView.
Crystalline perfection is typically pursued in semiconductors to enhance device performance. However, through modeling and experimental work, we show that defects can be strategically employed in a specific detection regime to increase sensitivity to extreme values. GaN diodes are demonstrated to effectively detect high‐energy proton beams at fluxes as
Jean‐Yves Duboz, Matilde Siviero, Lucas Lesourd, Eric Frayssinet, Sebastien Chenot, Petter Hofverberg, Sullivan Marafico, Marie Vidal, Maxime Hugues   +8 more
wiley   +1 more source

Heterosynaptic Memtransistors Based on Switching Operation Mechanism Using Designed Organic/Inorganic Heterostructures for Neuromorphic Electronics

Advanced Science, EarlyView.
Heteroysynaptic memtransistors are fabricated using a combination of π‐conjugated organic semiconductor TCTA and TMDC MoS2 heterostructure with bottom‐contact architecture. Non‐volatile heterosynaptic and homosynaptic functions such as long‐term plasticity and spike‐timing‐dependent plasticity are emulated by drain and gate pulses based on conduction ...
Taek Joon Kim, Hye Lim Jeong, Sang Wook Song, Dayeong Kwon, Sang‐hun Lee, Jinsoo Joo   +5 more
wiley   +1 more source

Plasmonics Meets Metasurfaces: A Vision for Next Generation Planar Optical Systems. [PDF]

Micromachines (Basel)
Butt MA.
europepmc   +1 more source

Dual Bipolar Resistive Switching in Wafer‐Scalable 2D Perovskite Oxide Nanosheets‐Based Memristor

Advanced Science, EarlyView.
A wafer‐scalable memristor based on 2D Sr2Nb3O₁₀ perovskite oxide nanosheets exhibits dual bipolar resistive switching through controllable oxygen ion migration and redox reactions. This single device enables both STDP and anti‐STDP synaptic functions, achieving 86.4% MNIST accuracy in supervised spiking neural networks, offering a compact, energy ...
Sohwi Kim, Chansoo Yoon, Haena Yim, Taeyoon Kim, Hoyoung Suh, Woohyeon Ryu, Gwangtaek Oh, Jihoon Jeon, Kwanyoung Oh, Yeonjoo Jeong, Ji‐Won Choi, Bae Ho Park   +11 more
wiley   +1 more source

Metasurfaces with Freely Varying Height in the Visible Using Grayscale Lithography. [PDF]

Nano Lett
Shanks DN, Wenger T, Muller RE, Wallace JK, Wilson DW.   +4 more
europepmc   +1 more source

Origins of Graphite Resistivity: Decoupling Stacking Fault and Rotational Misorientation

Advanced Science, EarlyView.
Interfacial dislocations critically influence interlayer transport in van der Waals (vdW) materials, yet quantifying their individual contributions remains challenging. We measure graphite's c‐axis resistivity and develop a decoupling strategy, revealing a resistivity ratio of ∼4507:74:1 for rotational misorientations, stacking faults, and AB stacking,
Weipeng Chen, Fuwei Yang, Tielin Wu, Yelingyi Wang, Quanshui Zheng, Deli Peng, Zhanghui Wu   +6 more
wiley   +1 more source

Interference Field Control for High-Uniformity Nanopatterning: A Review. [PDF]

Sensors (Basel)
Li J, Li X.
europepmc   +1 more source