Results 251 to 260 of about 21,175 (304)
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2012
Obtaining sub-20 nm lithography is not straightforward, even using a good tool with a sub-5 nm beam size. In this section, a brief overview of the various topics that will be covered in more depth in the rest of the chapter is given.
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Obtaining sub-20 nm lithography is not straightforward, even using a good tool with a sub-5 nm beam size. In this section, a brief overview of the various topics that will be covered in more depth in the rest of the chapter is given.
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Multiple electron-beam lithography
Microelectronic Engineering, 2001A number of multiple electron-beam approaches are currently under evaluation for sub-100-nm lithography. These approaches offer the potential of improving throughput for direct wafer writing and mask patterning and could have far reaching implications for the semiconductor industry.
T.H.P. Chang +3 more
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Journal of Vacuum Science and Technology, 1982
Electron beam lithography has become the principal production method for fabricating integrated circuit masks and reticles for 1–1 projection printing and for direct step‐on‐wafer exposure. This has been the result of improved quality, lower cost, and high speed in writing patterns that are doubling in complexity every year.
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Electron beam lithography has become the principal production method for fabricating integrated circuit masks and reticles for 1–1 projection printing and for direct step‐on‐wafer exposure. This has been the result of improved quality, lower cost, and high speed in writing patterns that are doubling in complexity every year.
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Electron beam photoresists for nanoimprint lithography
Microelectronic Engineering, 2002Abstract Polymer selection and critical dimension (CD) pattern uniformity across the wafer are key parameters for the nanoimprint lithography technique. This nanotechnology requires polymers having a low glass transition temperature (Tg) combined with a good etch resistance.
Gourgon, C., Perret, C., Micouin, G.
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Electron-beam lithography for small MOSFET's
IEEE Transactions on Electron Devices, 1980Electron-beam lithography with a novel multilevel resist structure together with two-dimensional process and device modeling and dry processing with reactive sputter etching have been employed to produce silicon-gate NMOS devices with micrometer and submicrometer channel lengths. Results for transistors and ring oscillators are reported.
R.K. Watts +4 more
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1986
To develop greater LSIs, it is necessary to increase the number of pattern elements per unit area by reducing circuit patterns. The increase of pattern elements per chip needs high-speed pattern writing. The electron-beam lithography system has stepped into the limelight as one of the systems for meeting the demand of fine and high-speed writing.
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To develop greater LSIs, it is necessary to increase the number of pattern elements per unit area by reducing circuit patterns. The increase of pattern elements per chip needs high-speed pattern writing. The electron-beam lithography system has stepped into the limelight as one of the systems for meeting the demand of fine and high-speed writing.
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High voltage electron beam lithography
Microelectronic Engineering, 1983Abstract The advantage of high voltage electron beam lithography in submicron VLSI fabrication is outlined. Continuously-moving-stage EB systems with small deflection width are suited to high voltage electron beam machines. At 50 kV, the following experimental results were obtained: 1. (1) 0.75 μm lines of PMMA are formed on a 0.8 μm step. 2.
Tadahiro Takigawa +3 more
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Electron beam lithography over topography
Microelectronic Engineering, 1996An investigation of electron beam lithography will be presented to structure resist over a topographical surface of a metallization layer. The investigation shows the influence of different accelerating voltages (2.5 and 20 kV) on resist profiles over topographical steps. Simulation methods are used to illustrate the experimental behaviour.
L. Bauch, U. Jagdhold, M. Böttcher
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1984
Over the past decade, the trend in integrated circuits for computers always has been a doubling of the circuit density every year. To-day’s products have 64.000 memory cells or 700 logic circuits on a 5 × 5 mm2 sized chip. For to-morrow, we can expect 288.000 and 516.000 memory cells or 5000 logic circuits on a chip.
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Over the past decade, the trend in integrated circuits for computers always has been a doubling of the circuit density every year. To-day’s products have 64.000 memory cells or 700 logic circuits on a 5 × 5 mm2 sized chip. For to-morrow, we can expect 288.000 and 516.000 memory cells or 5000 logic circuits on a chip.
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Scanning electron beam lithography
Proceedings, annual meeting, Electron Microscopy Society of America, 1983This paper discusses the role of scanning electron beam lithography in semiconductor microcircuit production and in the experimental fabrication of devices in the laboratory. It also describes the electron optical equipment developed for these applications.Electron beam lithography has found an important place in integrated circuit production through ...
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