Results 241 to 250 of about 161,928 (342)

A scalable electron beam irradiation platform applied for allotropic carbon transformation

open access: bronze, 2020
João Paulo de Campos da Costa   +6 more
openalex   +2 more sources

Pixelation‐Free, Monolithic Iontronic Pressure Sensors Enabling Large‐Area Simultaneous Pressure and Position Recognition via Machine Learning

open access: yesAdvanced Functional Materials, EarlyView.
A pixelation‐free, monolithic iontronic pressure sensor enables simultaneous pressure and position sensing over large areas. AC‐driven ion release generates spatially varying impedance pathways depending on the pressure. Machine learning algorithms effectively decouple overlapping pressure–position signals from the multichannel outputs, achieving high ...
Juhui Kim   +10 more
wiley   +1 more source

Analysis of aroma component changes and identification of irradiation markers in Luzhou-flavor liquor within one year after electron beam irradiation. [PDF]

open access: yesFood Chem X
Zhang L   +12 more
europepmc   +1 more source

Temperature‐Induced Nonvolatile Switching through Thermal Hysteresis in a Gd3Fe5O12/Ho3Fe5O12 Exchange‐Coupled Rare‐Earth Iron Garnet Bilayer

open access: yesAdvanced Functional Materials, EarlyView.
Reducing power consumption in spintronic memory remains a major challenge due to the need for high current densities. A bilayer of gadolinium and holmium iron garnets enables purely temperature‐induced, nonvolatile magnetic switching with bistable states within a ±25 K range. This approach achieves up to 66‐fold lower energy use than current spin–orbit
Junseok Kim   +3 more
wiley   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

open access: yesAdvanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee   +16 more
wiley   +1 more source

Two-Dimensional MoS2-Based Anisotropic Synaptic Transistor for Neuromorphic Computing by Localized Electron Beam Irradiation. [PDF]

open access: yesAdv Sci (Weinh)
Liu L   +15 more
europepmc   +1 more source

A New Threshold Switching Device With Tunable Negative Differential Resistance Based on ErMnO3 Polymorphs

open access: yesAdvanced Functional Materials, EarlyView.
Polymorph engineering in ErMnO3 enables low‐voltage, forming‐free threshold switching with tunable negative differential resistance. Conducting orthorhombic regions embedded in an insulating hexagonal matrix provide controlled Joule‐heating‐enhanced Poole–Frenkel transport. The hexagonal phase prevents excessive heating and breakdown.
Rong Wu   +8 more
wiley   +1 more source

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