Results 241 to 250 of about 161,928 (342)
A scalable electron beam irradiation platform applied for allotropic carbon transformation
João Paulo de Campos da Costa +6 more
openalex +2 more sources
A pixelation‐free, monolithic iontronic pressure sensor enables simultaneous pressure and position sensing over large areas. AC‐driven ion release generates spatially varying impedance pathways depending on the pressure. Machine learning algorithms effectively decouple overlapping pressure–position signals from the multichannel outputs, achieving high ...
Juhui Kim +10 more
wiley +1 more source
Analysis of aroma component changes and identification of irradiation markers in Luzhou-flavor liquor within one year after electron beam irradiation. [PDF]
Zhang L +12 more
europepmc +1 more source
Reducing power consumption in spintronic memory remains a major challenge due to the need for high current densities. A bilayer of gadolinium and holmium iron garnets enables purely temperature‐induced, nonvolatile magnetic switching with bistable states within a ±25 K range. This approach achieves up to 66‐fold lower energy use than current spin–orbit
Junseok Kim +3 more
wiley +1 more source
Influence of Electron Beam Irradiation and RPMI Immersion on the Development of Magnesium-Doped Hydroxyapatite/Chitosan Composite Bioactive Layers for Biomedical Applications. [PDF]
Groza A +8 more
europepmc +1 more source
Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee +16 more
wiley +1 more source
Two-Dimensional MoS2-Based Anisotropic Synaptic Transistor for Neuromorphic Computing by Localized Electron Beam Irradiation. [PDF]
Liu L +15 more
europepmc +1 more source
Polymorph engineering in ErMnO3 enables low‐voltage, forming‐free threshold switching with tunable negative differential resistance. Conducting orthorhombic regions embedded in an insulating hexagonal matrix provide controlled Joule‐heating‐enhanced Poole–Frenkel transport. The hexagonal phase prevents excessive heating and breakdown.
Rong Wu +8 more
wiley +1 more source

