Results 141 to 150 of about 6,093,819 (293)

Charge-density and spin-density excitations in a two-dimensional electron gas with Rashba spin-orbit coupling

, 2006
We study theoretically the charge-density and spin-density excitations in a two-dimensional electron gas in the presence of a perpendicular magnetic field and a Rashba type spin-orbit coupling.
Xu LJ (Xu L. J.), Wu XG (Wu X. G.), Xu, LJ, Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China.   +2 more
core  

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Profile Study on Different Patterns in PMMA Bilayer Resist Configurations Under 20 keV Electron Beam Exposure. [PDF]

Nanomaterials (Basel)
Kostic I, Manoilov E, Bencurova A, Koleva E, Andok R, Vutova K.   +5 more
europepmc   +1 more source

Effect of electron-electron scattering on spin dephasing in a high-mobility low-density two-dimensional electron gas

, 2008
By utilizing time-resolved Kerr rotation techniques, we have investigated the spin dynamics of a high-mobility low density two-dimensional electron gas in a GaAs/Al0.35Ga0.65As heterostructure in the dependence on temperature from 1.5 to 30 K.
Ji, Y, Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China. 电子邮箱地址: jyang@red.semi.ac.cn, Ruan, XZ, Ji, Y, Umansky, V, Luo, HH, Xu, ZY   +5 more
core  

Regulated Ion‐Diffusion Hydrogels for Subtle and Multimodal Temperature‐Strain Sensing in Wound Monitoring

Advanced Functional Materials, EarlyView.
A soft, dual‐channel hydrogel patch enables simultaneous detection of wound temperature and strain by integrating ion‐diffusion‐mediated thermoelectric and resistive sensing. The conformal design maintains stable performance during motion, capturing subtle inflammatory and mechanical changes for continuous wound monitoring.
Yu Fang, Xinglong Pan, Zhiwei Li, Wanheng Lu, Chang Liu, Yi Zhou, Guo Tian, Ghim Wei Ho   +7 more
wiley   +1 more source

Helium nanodroplet force field for advancing single-molecule serial electron diffraction imaging. [PDF]

Biophys J
Cruz-Chú ER, Clifford A, Trejo M, Ge Y, Kong W, Schwander P.   +5 more
europepmc   +1 more source

Fully Additive Vertical Organic Electrochemical Transistors on Renewable and Compostable Substrates Enable Ultrasensitive Bioelectronics

Advanced Functional Materials, EarlyView.
Fully additive vertical organic electrochemical transistors (vOECTs) with channel‐length of 226 nm on a 50 µm compostable substrate achieve >106 current modulation and ∼36 mS transconductance. Ion‐selective integration enables 1.1 mA dec−1 sensitivity and 36 µm detection limit, highlighting a scalable platform for sustainable electronics and ...
Giulia Frusconi, Samuele Lavelli, Zsolt M. Kovács‐Vajna, Fabrizio Torricelli   +3 more
wiley   +1 more source

From molecular design to high performance: interpreting the combined effect of π-linkers and acceptor groups in benzotriazole-based non-fullerene acceptors. [PDF]

RSC Adv
Ateeq K, Shehzad MK, Altaf Y, Rehman MU, Bassran R, Waris MF, Ahmed F, Haider F, Ali B.   +8 more
europepmc   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

Unveiling the beam-wake interactions in plasma wakefield acceleration. [PDF]

Nat Commun
Wan Y, Tata S, Seemann O, Andriyash IA, Peng B, Jing T, Levine EY, Kroupp E, Malka V.   +8 more
europepmc   +1 more source