Results 201 to 210 of about 4,400,898 (388)

Universal Superconductivity in FeTe and All‐Iron‐Based Ferromagnetic Superconductor Heterostructures

open access: yesAdvanced Functional Materials, EarlyView.
The first all‐iron‐based ferromagnetic superconductor heterostructures with high‐temperature superconductivity and strong ferromagnetism aredemonstrated. From this, it is discovered that FeTe becomes universallysuperconducting with a minute level of cationic impurities through doping ordiffusion from neighboring layers, suggesting its ground state can ...
Hee Taek Yi   +12 more
wiley   +1 more source

Applications of Electron Backscatter Diffraction (EBSD) in Archaeology

open access: yes, 2012
Electron backscattered diffraction (EBSD) has been used to study samples of archaeological gold, silver, copper and bronze prepared using simple metallographic etches. EBSD maps of orientation and local misorientation revealed the metals’ microstructures
Northover, J. P., Northover, S. M.
core  

Electroplating of Wear‐ and Corrosion‐Resistant CrCoNi Medium‐Entropy Alloys beyond Hard Chromium Coatings

open access: yesAdvanced Functional Materials, EarlyView.
The electroplating of a CrCoNi medium‐entropy alloy is achieved using a mixture of an ionic liquid and an aqueous solution containing metal salts. The CrCoNi medium‐entropy alloy thin film exhibits high wear and corrosion resistance superior to conventional hard chromium coatings. Abstract High‐entropy alloys (HEAs) and medium‐entropy alloys (MEAs) are
Yuki Murakami   +7 more
wiley   +1 more source

ErMn6Sn6: A Promising Kagome Antiferromagnetic Candidate for Room‐Temperature Nernst Effect‐Based Thermoelectrics

open access: yesAdvanced Functional Materials, EarlyView.
This work investigates the Nernst effect in the Kagome magnet ErMn6Sn6 which exhibits both topological and anomalous Nernst effects with the anomalous Nernst coefficient reaching 1.71 µV K⁻¹ at 300 K. This value surpasses that of most canted antiferromagnetic materials, making ErMn6Sn6 a promising candidate for advancing thermoelectric devices based on
Olajumoke Oluwatobiloba Emmanuel   +2 more
wiley   +1 more source

Ultra‐Fast Non‐Volatile Resistive Switching Devices with Over 512 Distinct and Stable Levels for Memory and Neuromorphic Computing

open access: yesAdvanced Functional Materials, EarlyView.
A materials and device design concept that comprises a self‐assembled ultra‐thin epitaxial ion‐transporting layer, an amorphous oxide overcoat oxygen‐blocking layer, and a partial filament formed during an electroforming step is proposed for low‐current multilevel resistive switching devices.
Ming Xiao   +17 more
wiley   +1 more source

Electron Diffraction Studies on Fluoroderivatives of Biphenyl. [PDF]

open access: bronze, 1954
Otto Bastiansen   +3 more
openalex   +1 more source

Selective Reduction Laser Sintering: A New Strategy for NO2 Gas Detection Based on In2O3 Nanoparticles

open access: yesAdvanced Functional Materials, EarlyView.
This research utilizes selective reduction laser sintering (SRLS) to engineer In2O3 NPs for flexible NO2 sensors. The introduction of oxygen vacancy defects enhances sensor performance, offering excellent responsiveness, rapid response/recovery, superior selectivity, low detection limit, and long‐term stability.
Shaogang Wang   +8 more
wiley   +1 more source

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