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Precession Electron Diffraction

2012
Precession electron diffraction (PED) is a key technique available to electron microscopists to elucidate the structure of inorganic crystals. A PED pattern is formed by the summation of a series of diffraction patterns whose incoming beam is tilted with respect to the optic axis.
Eggeman, Alexander S., Midgley, Paul A.
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Convergent-beam electron diffraction

Microscopy, 2011
This paper reviews the convergent-beam electron diffraction (CBED) technique. Point- and space-group determination methods of ordinary crystals are described, along with an example of the determination method for Sr₃Ru₂O₇. The symmetry determination of one-dimensionally incommensurate crystals and quasicrystals is explained.
Michiyoshi, Tanaka, Kenji, Tsuda
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3D electron diffraction techniques

Acta Crystallographica Section B Structural Science, Crystal Engineering and Materials, 2019
3D electron diffraction is an emerging technique for the structural analysis of nanocrystals. The challenges that 3D electron diffraction has to face for providing reliable data for structure solution and the different ways of overcoming these challenges are described. The route from zone axis patterns towards 3D electron diffraction techniques such as
Mauro Gemmi, Arianna E. Lanza
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Electron Diffraction from Coals

Science, 1961
Electron diffraction patterns have been obtained for coals of different rank by transmission through ultrathin sections 500 to 2000 angstroms thick. Analysis of these patterns for the distribution of atoms in coals by Debye radial distribution functions should furnish information complementary to that derived from x-ray studies, considering the ...
S, Ergun, J T, McCartney
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Electron-diffraction transistors

Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 2003
The design, fabrication, and applications of QUADFETs (quantum diffraction field effect transistors) are described. The QUADFETs will enable Fraunhofer diffraction to be demonstrated and exploited. These devices are high-electron-mobility transistors (HEMTs), in which the source and a specially formed drain perform the functions of the light source and
G.H. Bernstein, A.M. Kriman
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