Results 191 to 200 of about 395,735 (308)

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Ternary Logic Transistors Using Multi-Stacked 2D Electron Gas Channels in Ultrathin Oxide Heterostructures. [PDF]

Adv Sci (Weinh)
Choi JH, Seok TJ, Kim SJ, Dae KS, Jang JH, Cho DY, Lee SW, Park TJ.   +7 more
europepmc   +1 more source

Deformation of the Fermi surface of a spinless two-dimensional electron gas in presence of an anisotropic Coulomb interaction potential. [PDF]

Sci Rep, 2021
Ciftja O.
europepmc   +1 more source

Liquid Phase Transmission Electron Microscopy: A Window into the Early Stages of Complex Material Formation

Advanced Functional Materials, EarlyView.
Liquid‐phase transmission electron microscopy enables direct observation of nucleation and growth processes in solution. This review is dedicated to the remembrance of Helmut Cölfen and highlights recent studies on complex materials—oxides, biominerals, organic–inorganic crystals—which were central to his research activity. It summarizes key milestones,
Charles Sidhoum, Vinavadini Ramnarain, Nathaly Ortiz Peña, Dris Ihiawakrim, Clément Sanchez, Ovidiu Ersen   +5 more
wiley   +1 more source

Anomalous-circular photogalvanic effect in a GaAs/AlGaAs two-dimensional electron gas

, 2009
We have studied the circular photogalvanic effect (CPGE) in a GaAs/AlGaAs two-dimensional electron gas excited by near infrared light at room temperature.
Tang CG, Liu Y, Chen YH, Wang ZG, Chen YH Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: yhchen@red.semi.ac.cn   +4 more
core  

Engineering the plasmon modes of a confined electron gas. [PDF]

Nanophotonics
Haky A, Vasanelli A, Pantzas K, Todorov Y, Beaudoin G, Patriarche G, Sagnes I, Sirtori C.   +7 more
europepmc   +1 more source

Self‐Sintering Ionogel Binder for Flexible, Recyclable, and Healable Printed Giant Magnetoresistive Sensors

Advanced Functional Materials, EarlyView.
ABSTRACT Electronic waste has emerged as a major environmental challenge, driven by the massive consumption and a limited lifetime of modern electronic devices, stimulating the development of sustainable electronics. Here, an all‐biomaterial gelatin‐choline‐citric acid ([Ch][CA]) ionogel is developed as an active binder to realize self‐sintered ...
Lin Guo, Xiaotao Wang, Guannan Mu, Proloy Taran Das, Igor Veremchuk, Conrad Schubert, Aaron D. Cross, Yevhen Zabila, Xuan Peng, Larysa Baraban, Denys Makarov   +10 more
wiley   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

Advanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu, Haksoon Jung, Yongwoo Lee, Hoichang Jeong, Yanfeng Zhao, Heesoo Yang, Minho Park, Hyeonjin Lee, Seunghun Baek, Minju Song, Junghwan Kim, Youngmin Jo, Hyunjin Park, Munhyeon Kim, Jae‐Joon Kim, Kyuho Jason Lee, Byungjo Kim, Jimin Kwon   +17 more
wiley   +1 more source

Comparison of Two-dimensional Electron Gas of Etched and Unetched InAlAs/InGaAs/InAlAs Metamorphic High Electron Mobility Transistor Structures

, 2012
[[abstract]]We present the photoluminescence (PL) and Hall studies on the two-dimensional electron gas (2DEG) of etched and unetched In0.5Al0.5As/In0.5Ga0.5As metamorphic high electron mobility transistor (mHEMT) structures.
Wu, Jenq-Shinn; Hung, C. C. ; Lu, C. T. ; Lin, D. Y.
core  

Interfacial Spin-Orbit-Coupling-Induced Strong Spin-to-Charge Conversion at an All-Oxide Ferromagnetic/Quasi-Two-Dimensional Electron Gas Interface. [PDF]

ACS Appl Mater Interfaces
Jin MJ, Yang G, Um DS, Linder J, Robinson JWA.   +4 more
europepmc   +1 more source