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Perpendicular electron transport through a two-dimensional electron- gas layer

Applied Physics Letters, 1992
We analyze the scattering processes of high-energy (approximately 0.3 eV) electrons impinging at normal incidence on a zero-temperature two-dimensional electron gas (2DEG), and derive an expression for the scattering probability. We proceed in calculating the total scattering rate and energy loss of the hot electrons as a function of their energy of ...
R.-J. E. Jansen   +2 more
openaire   +1 more source

Study of Electron Transport Layer‐Free and Hole Transport Layer‐Free Inverted Perovskite Solar Cells

Solar RRL, 2021
The selective contacts in perovskite solar cells play a major role in solar cell (SC) performance and optimization. Herein, the inverted architecture is focused on, where systematically the electron transport layer (ETL) and the hole transport layer (HTL) from the SC structure are eliminated.
Adva Shpatz Dayan, Lioz Etgar
openaire   +1 more source

Understanding metal doping for organic electron transport layers

Applied Physics Letters, 2012
This work concerns the physical mechanisms of metal n-doping in charge transport layers for optoelectronic devices, for which the doping level is constrained by transparency requirements so as to avoid parasitic absorption. Comparing various metal dopants, we claim that enhanced conductivity at low doping is initiated by the electrical doping effect ...
Alexander Mityashin   +3 more
openaire   +1 more source

Nanocomposite Electron-Transport Layer Incorporated Highly Efficient OLED

ACS Applied Electronic Materials, 2020
The realization of highly efficient devices depends on efficient charge carrier injection, employment of materials, and proper fabrication methodologies.
Mangey Ram Nagar   +4 more
openaire   +1 more source

Electronic Transport Properties of ZnSe Layers on GaAs

MRS Proceedings, 1989
AbstractThe electronic transport properties of ZnSe layers grown by MBE on GaAs sub- strates are studied by small-signal ac admittance, dc current-voltage, and Hall effect measurements. This work is supplemented by a study of TEM and x-ray rocking curve data.
T. Marshall   +5 more
openaire   +1 more source

Two-dimensional electron transport in InP surface layers

Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1987
An Ensemble Monte Carlo (EMC) approach to simulate electron transport in InP surface layers. The EMC includes scattering caused by surface roughness, ionized impurities, defects, and polar optic and acoustic phonons. The EMC has been used to analyze two different ranges experiment mobility measurements reported in the literature.
G. R. Bailey   +3 more
openaire   +1 more source

Electronic transport of co-doped misfit-layered cobaltites

Journal of Materials Science: Materials in Electronics, 2015
We have fabricated two series of co-doped misfit-layered cobaltites Ca3Co4O9+δ, Ca3−xYbxCo4−yAgyO9+δ with (x = 0.05, y = 0.05), (x = 0.05, y = 0.10), and (x = 0.05, y = 0.10), and Ca3−xEuxCo4−yAgyO9+δ with (x = 0.05, y = 0.05), (x = 0.05, y = 0.10), and (x = 0.05, y = 0.10) using conventional solid state reaction.
Ankam Bhaskar   +2 more
openaire   +1 more source

Electron transport through thin layers of alkali halides

Physica Status Solidi (a), 1970
The mean electron attenuation length in layers of some alkali halides was determined by measuring the photoelectron absorption coefficient. The results obtained are compared with theoretical predictions for the mechanism of electron scattering by phonons.
T. Lewowski, P. Bastie, M. Bizouard
openaire   +1 more source

Electron Transport Layers in Perovskite Solar Cells

2021
In recent years, the power conversion efficiency of perovskite solar cells has increased substantially, reaching today's values of above 25%. This has also placed an increased focus on device stability, which still limits commercial use. Electron transport layers (ETL) are critical for both factors in perovskite solar cells and have received much ...
Jafari, Fatemeh   +9 more
openaire   +1 more source

Electronic transport in periodically δ-doped GaAs layers

Journal of Applied Physics, 1991
We investigate periodically silicon δ-doped GaAs sample grown by molecular-beam epitaxy using magnetoresistance measurements. Transport measurements give evidence for quantum confinement of the electronic gas in the layer. Thomas–Fermi approximation is used in order to assess the various subband densities.
J. C. Egues   +6 more
openaire   +1 more source

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