Results 301 to 310 of about 585,841 (318)

Nanostructured electron transport layers in PSC

2019
In perovskite solar cells (PSC), high photovoltaic performance is governed by the extent of electron mobility. For electron transport material (ETM), TiO2 films have been widely accepted. Having similar electron band structure and physical properties to TiO2, ZnO is a viable low- temperature alternative, especially as it can be easily solution ...
Panžić, Ivana, Kojić, Vedran, Mandić, Vilko, Gajović, Andreja   +3 more
openaire  

Electronic transport in gratinglike potential modulated inversion layers

Journal of Applied Physics, 1989
We propose a quantitative approach to the long-range potential fluctuation model previously developed in disordered 3-D semiconductors. To study how potential modulation modifies the conduction processes in 2-D electron gas, metal-oxide-semiconductor field-effect transistor structures were irradiated through the gate oxide by an electron beam (20-keV ...
F. Vettese, J. Sicart, J. L. Robert, G. Vincent, A. Vareille   +4 more
openaire   +1 more source

Electronic recombinations and ionic transport in BPSG layers

Microelectronic Engineering, 2001
Abstract Thermally stimulated luminescence (TSL) and current (TSC) measurements above room temperature were performed on 1150 nm borophosphosilicate glass films obtained by sub-atmospheric chemical vapour deposition. Several concentrations of B and P ions were considered, in the range 2–5% and 4–9% in weight, respectively.
A. Vedda, E. Carollo, S. Croci, M. Martini, A. Morbiato, G. Spinolo, M. Vitali, L. Zanotti   +7 more
openaire   +1 more source

Electronic transport properties of double layer metallic films

Applied Physics A Solids and Surfaces, 1990
Size effect modifications of the normal and Hall resistivities for copper and copper-ferromagnetic amorphous double layer metallic films are studied vs. the thickness of copper deposited on the top of the amorphous substrate. Experimental data are compared with calculations derived from the Fuchs-Sondheimer theory, as developed by Bergmann. For copper,
G. Bordin, F. Gallerani, A. Magnaterra
openaire   +1 more source

Electron transport in In0.53Ga0.47As/plasma oxide inversion layers

Applied Physics Letters, 1984
In this letter we report the first direct measurements of low field transport properties for inversion layer electrons in an InGaAs native oxide metal-oxide-semiconductor structure. Our results show that these electrons have a low field mobility which varies from 3000 to 4500 cm2/Vs, compared with 1500 cm2/Vs measured in field-effect transistor ...
A. S. H. Liao, B. Tell, R. F. Leheny, T. Y. Chang, E. A. Caridi, E. Beebe, J. C. DeWinter   +6 more
openaire   +1 more source

Electronic transport properties of metallic multi-layer films

Journal of Physics F: Metal Physics, 1985
General expressions for the electrical resistivity and the temperature coefficient of resistivity of metallic multi-layer films are derived. It is assumed that the films consist of thin alternating layers of two different metals. The calculations are made within the framework of the Boltzmann kinetic theory.
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Monte Carlo study of electron transport in silicon inversion layers

Physical Review B, 1993
Electron transport in Si inversion layers at 300 K is studied using a self-consistent Monte Carlo solution of the Boltzmann transport equation coupled to the two-dimensional Poisson equation and the one-dimensional Schr\"odinger equation. Physical elements included in the model are (1) nonparabolicity effects to treat quantization in the inversion ...
, Fischetti, , Laux
openaire   +2 more sources

Angular dependence of hot-electron transport through a two-dimensional electron-gas layer

Physical Review B, 1993
We present an analysis of the angular dependence of hot-electron transport through a zero-temperature two-dimensional electron gas (2DEG), as can be realized experimentally in semiconductor structures under applied magnetic fields. We calculate the scattering probability and energy loss as functions of energy and angle of incidence of the hot electrons
, Jansen, , Farid, , Kelly
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Dimensionality matters: Electronic transport in 2D layered materials

2017 75th Annual Device Research Conference (DRC), 2017
It seems to be unavoidable that the first question that anyone asks when a new material is introduced fo electronic device applications is: “What mobility does this material have?” In fact, this question can be rather misleading, like in the context of graphene, where the absence of a bandgap immediately prohibits its use for transistor applications ...
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Dispersive electron transport in coronene layers

Thin Solid Films, 1983
W. Mycielski, B. Ziółkowska-Pawlak, A. Lipiński   +2 more
openaire   +1 more source