Results 161 to 170 of about 60,171 (287)

Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices

open access: yesAdvanced Science, EarlyView.
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen   +9 more
wiley   +1 more source

Stabilizing Atomically Dispersed Au With Adjacent Pt for Spatially Precise Molecule Recognition

open access: yesAdvanced Science, EarlyView.
A strategy to stabilize atomically dispersed Au catalysts by introducing Pt atoms into CeO2 supports is presented. Pt incorporation prevents Au aggregation, enhances Au‐O orbital coupling, and enables precise recognition of multi‐functionalized molecules, improving catalytic performance and the structural stability of Au‐based catalysts in ...
Rui Tang   +12 more
wiley   +1 more source

Nanoscale Secondary Ion Mass Spectrometry for Quantifying Membrane Fouling: Fouling Layer Structure and Chemical Interaction

open access: yesAdvanced Science, EarlyView.
Nanoscale secondary ion mass spectrometry (Nano SIMS) is established as a powerful analytical tool to visualize and quantify the membrane fouling layers. ABSTRACT Membrane technology has garnered considerable attention for applications in wastewater treatment and resource recovery. Nevertheless, membrane fouling remains a major barrier, yet the lack of
Mengfei Wu   +4 more
wiley   +1 more source

Electronegativity: A mnemonic rule

open access: yesJournal of Chemical Education, 1987
KAPELLOS, S, MAVRIDES, A
openaire   +2 more sources

Diffusion‐Driven Targeted Passivation of Selenium Vacancies via an I‐Doped CdS Buffer Layer for Efficient Sb2Se3 Solar Cells

open access: yesAdvanced Science, EarlyView.
Iodine incorporation into the CdS buffer layer induces spontaneous anion diffusion and selectively passivates selenium vacancies in Sb2Se3 absorbers. The formation of low‐energy, charge‐neutral ISe defects effectively suppresses non‐radiative recombination, resulting in a substantially enhanced open‐circuit voltage and boosting the device efficiency to
Luyan Shen   +6 more
wiley   +1 more source

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