Results 141 to 150 of about 3,731,531 (363)

Efficient NiOx Hole Transport Layers Enabled by Multifunctional MXenes for High‐Performance Tin‐Lead Perovskite Solar Cells

open access: yesAdvanced Functional Materials, EarlyView.
An efficient NiOx HTL is successfully prepared by introducing MXene as an additive without further surface modification to fabricate high‐performance FASn0.5Pb0.5I3 perovskite solar cells. The introduction of MXene contributes to improved conductivity of NiOx, better aligned at NiOx/perovskite interfaces, and enhanced quality of perovskite films ...
Lijun Chen   +12 more
wiley   +1 more source

Astrocyte‐Guided Maturation of Neural Constructs in a Modular Biosynthetic Hydrogel for Biohybrid Neurotechnologies

open access: yesAdvanced Functional Materials, EarlyView.
A modular biosynthetic PVA–gelatin hydrogel crosslinked via visible‐light thiol‐ene chemistry is engineered as a coating for neural electrodes. Optimizing matrix composition and mechanical properties enables the hydrogel to support astrocytic populations that guide neural differentiation and functional maturation.
Martina Genta   +4 more
wiley   +1 more source

Modelling Realistic Multi-layer devices for superconducting quantum electronic circuits [PDF]

open access: green
Giuseppe Colletta   +4 more
openalex   +1 more source

In Materia Shaping of Randomness with a Standard Complementary Metal‐Oxide‐Semiconductor Transistor for Task‐Adaptive Entropy Generation

open access: yesAdvanced Functional Materials, EarlyView.
This study establishes a materials‐driven framework for entropy generation within standard CMOS technology. By electrically rebalancing gate‐oxide traps and Si‐channel defects in foundry‐fabricated FDSOI transistors, the work realizes in‐materia control of temporal correlation – achieving task adaptive entropy optimization for reinforcement learning ...
Been Kwak   +14 more
wiley   +1 more source

True Random Number Generator for Robust Data Security via Intrinsic Stochasticity in a 2D hBN Threshold Switching Memristor

open access: yesAdvanced Functional Materials, EarlyView.
We demonstrate true random number generator (TRNG) circuits based on a 2D hBN threshold switching memristor integrated with passive components. Leveraging its intrinsic stochastic behavior, the spike generator produces output fluctuations directly converted into random bits via a comparator.
Yooyeon Jo   +5 more
wiley   +1 more source

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