Results 251 to 260 of about 636,824 (355)

Accuracy and Potentialof Hardware-Efficient Ansatzefor Molecular Ground and Excited State Electronic Structure Calculations:Benchmark and Analysis of High-Depth Quantum Circuits

open access: green
Carlos Bistafa (1953781)   +4 more
openalex   +1 more source

Sensing of Chloride Ions in Sweat by Means of Printed Extended‐Gate Organic Electrochemical Transistors

open access: yesAdvanced Functional Materials, EarlyView.
In this work, a platform based on an Extended‐Gate OECT is successfully developed and tailored for the detection of physiologically relevant chloride ion concentrations in artificial eccrine sweat. Leveraging the extended‐gate architecture, a high‐performance OECT based on inkjet‐printed pg2T‐TT is coupled with an inkjet‐printed Ag/AgCl electrode ...
Cristiano Bortolotti   +7 more
wiley   +1 more source

Multi-Resistant Staphylococcus aureus Growth Inhibition Using an Innovative High Voltage Nanosecond Pulser: In Vitro Experimental Results. [PDF]

open access: yesMicrobiologyopen
Balasis S   +7 more
europepmc   +1 more source

Differentiating the Synergistic Interactions Between Li+ Salts and Cyclic to Linear Carbonate Ratios to Enable Wide‐Temperature Performance of Lithium‐Ion Batteries

open access: yesAdvanced Functional Materials, EarlyView.
The coordination in carbonate solvents and degradation products of lithium difluoro(oxolato) borate (LiDFOB) salt enables sufficient passivation of both LiNi0.8Mn0.1Co0.1O2 (NMC811) cathode and graphite anode in the absence of ethylene carbonate (EC).
Thomas J. Watts   +2 more
wiley   +1 more source

Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System

open access: yesAdvanced Functional Materials, EarlyView.
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang   +6 more
wiley   +1 more source

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