Results 271 to 280 of about 630,759 (334)

Synergistic Effects of Entropy Tuning in Niobium‐Based Oxide Anode for Fast‐Charging Lithium‐Ion Batteries

open access: yesAdvanced Functional Materials, EarlyView.
An entropy‐tuned niobium‐based oxide (ETNO) anode for fast‐charging lithium‐ion batteries are presented, engineered via multi‐cation doping. The synergistic effects of entropy tuning result in excellent rate capability and long‐term durability under ultrafast charging conditions.
Yoojin Ahn   +6 more
wiley   +1 more source

Polymer‐Incorporated Mechanically Compliant Carbon Nanotube Microelectrode Arrays for Multichannel Neural Signal Recording

open access: yesAdvanced Functional Materials, EarlyView.
This work presents a soft microelectrode array based on vertically aligned carbon nanotube (CNT) forests, combining high conductivity with mechanical softness. A densification process and air‐pressure‐assisted flexibilization improve structural integrity, ensuring stable insertion and reduced inflammation.
Hyeonhee Roh   +8 more
wiley   +1 more source

NFC/RFID-enabled wearables and implants for biomedical applications. [PDF]

open access: yesMicrosyst Nanoeng
Zou H   +9 more
europepmc   +1 more source

Polaronic and Electrochemical Signatures in Group IVB (Ti, Zr, Hf) Oxides: Unified SKP–DFT Insights for Tunable Transport in Energy and Electronic Devices

open access: yesAdvanced Functional Materials, EarlyView.
Charge carrier concentration and mobility in TiO2, ZrO2, and HfO2 powder films are experimentally mapped as a function of temperature. The results uncover polaron‐mediated transport regimes and field‐activated conduction, enabling the design of oxide‐based electronic and energy devices with thermally tunable functionality.
Beatriz Moura Gomes   +3 more
wiley   +1 more source

Gated PN Junction in Ambipolar MoS2 for Superior Self‐Powered Photodetection

open access: yesAdvanced Functional Materials, EarlyView.
A high‐quality gated pn junction based on ambipolar molybdenum disulfide (MoS2) is demonstrated by employing a partial‐gate structure and a Pt bottom contact that forms a semi‐van der Waals interface, facilitating efficient hole injection into the channel.
Jaeha Hwang   +12 more
wiley   +1 more source

Electrically Binary and Ternary Convertible CMOS Inverter and Logic Gate Using Complementary Field‐Effect Transistors Based on Vertically Stacked MoS2/WSe2 n‐/p‐ Field‐Effect Transistors

open access: yesAdvanced Functional Materials, EarlyView.
In this work, a reconfigurable T‐CMOS inverter based on vertically stacked MoS2 and WSe2 MOSFETs with a gate‐tunable MoS2 resistor, enabling stable ternary logic, is demonstrated. The T‐CMOS inverter supports electrical switching between ternary and binary modes and is further extended to implement ternary NAND (NMIN) and NOR (NMAX) logic gates ...
Changwook Lee   +5 more
wiley   +1 more source

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