Active and integrated electronic metadevices for future telecommunication circuits. [PDF]
Samizadeh Nikoo M+5 more
europepmc +1 more source
Retracted: “Evaluation of Cam Shaft Profile Form Error by an Electronic Height Gauge” [ASME 2012 International Mechanical Engineering Congress and Exposition, Volume 3: Design, Materials and Manufacturing, Parts A, B, and C, Houston, Texas, USA, November 9-15, 2012, Conference Sponsors: ASME, ISBN: 978-0-7918-4519-6, Copyright © 2012 by ASME. Paper No. IMECE2012-85789, pp. 1481-1486; 6 pages; doi: 10.1115/IMECE2012-85789] [PDF]
ASME
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This study examines the incorporation of the polymer BUTVAR during the synthesis of various perovskite structures at room temperature The study demonstrates that the incorporation of the polymer solution enhances the optical characteristics and improves the shape uniformity of the resultant perovskite material without altering the inherent structure of
Elshaimaa Darwish+4 more
wiley +1 more source
Bao ChangchunAssociate professor of Information Engineering+6 more
doaj +2 more sources
Bibliometrics effects of a new paper level classification. [PDF]
Peña-Rocha M+3 more
europepmc +1 more source
Section 1: Technology of the active media of electronic engineering [PDF]
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This study explores aerosol jet‐printed (AJP) surface roughness, its effects on the performance of microwave electronics, and its process contributors. First, an electromagnetic model is vetted for AJP's unique roughness signature. Simulations are built which show process‐induced roughness is as significant as conductor resistivity in driving microwave
Christopher Areias, Alkim Akyurtlu
wiley +1 more source
Investigating Fe and Cr doping effects on thermoelectric efficiency in Mg<sub>3</sub>Sb<sub>2</sub> through first-principles calculations for sustainable energy solutions. [PDF]
Owais M+4 more
europepmc +1 more source
Herein the metal‐to‐insulator transition is investigated when depositing vanadium dioxide (VO2) on glass or aluminum‐doped zinc oxide (AZO). O2 flow tuning during the deposition and additional post annealing are effective to control the metal‐to‐insulator transition. However, the VO2/AZO/glass stack reveals an increase in the transition temperature and
Eduard Llorens Balada+3 more
wiley +1 more source