Results 291 to 300 of about 11,455,500 (377)
AI-accelerated discovery of altermagnetic materials. [PDF]
Gao ZF+7 more
europepmc +1 more source
Functional Materials for Electronics
openaire +3 more sources
The electroplating of a CrCoNi medium‐entropy alloy is achieved using a mixture of an ionic liquid and an aqueous solution containing metal salts. The CrCoNi medium‐entropy alloy thin film exhibits high wear and corrosion resistance superior to conventional hard chromium coatings. Abstract High‐entropy alloys (HEAs) and medium‐entropy alloys (MEAs) are
Yuki Murakami+7 more
wiley +1 more source
This work investigates the Nernst effect in the Kagome magnet ErMn6Sn6 which exhibits both topological and anomalous Nernst effects with the anomalous Nernst coefficient reaching 1.71 µV K⁻¹ at 300 K. This value surpasses that of most canted antiferromagnetic materials, making ErMn6Sn6 a promising candidate for advancing thermoelectric devices based on
Olajumoke Oluwatobiloba Emmanuel+2 more
wiley +1 more source
Organic-inorganic hexahalometalate-crystal semiconductor K<sub>2</sub>(Sn, Se, Te)Br<sub>6</sub> hybrid double perovskites for solar energy applications. [PDF]
Bouferrache K+4 more
europepmc +1 more source
Carbon nanomembranes with ultra‐thin Al2O3 functionalization are less than 15 nm thin and exhibit outstanding permeation performance with a water vapor/nitrogen selectivity higher than 1 × 104, twice that of pristine CNMs, and an exceptionally high water vapor permeation rate for potential applications in air dehumidification.
Jan Biedinger+10 more
wiley +1 more source
Self‐aligned gate transistors are developed with a single‐step dielectric passivation and fine‐tuning of source/drain electrode work function using phosphonic acid self‐assembled monolayers (SAM). This transistor architecture minimizes overlap capacitances and access resistance.
Linqu Luo+16 more
wiley +1 more source
A materials and device design concept that comprises a self‐assembled ultra‐thin epitaxial ion‐transporting layer, an amorphous oxide overcoat oxygen‐blocking layer, and a partial filament formed during an electroforming step is proposed for low‐current multilevel resistive switching devices.
Ming Xiao+17 more
wiley +1 more source
Thermodynamic signatures of diagonal nematicity in RbFe<sub>2</sub>As<sub>2</sub> superconductor. [PDF]
Mizukami Y+16 more
europepmc +1 more source