Results 51 to 60 of about 9,589 (216)
Kelvin Probe Force Microscopy (KPFM) under laser illumination is employed to investigate the band structure of MoS2–WS2 heterostructures and its impact on charge carrier separation at the heterointerface.
M. Abdelbaky +11 more
doaj +1 more source
n ...
openaire +1 more source
Graphical abstract illustrating the challenges, opportunities, and research gaps in decarbonizing ASEAN'S transport sector through electric vehicle (EV) and biofuel policy pathways. The framework highlights infrastructural, policy, and investment barriers alongside emerging opportunities from advanced biofuel technologies and supportive policy ...
Ohn Zin Lin +4 more
wiley +1 more source
Erweiterung der Siebkettentheorie / [PDF]
Overdruk uit: Archiv für Elektrotechnik, Bd.
Strutt, M. J. O.(Maximilian J. O.),1903-1992(viaf)44285565
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Nonverbal Auditory Communication for Human–Robot Interaction in Industry 5.0: A Scoping Review
In Industry 5.0 (I5.0), close-proximity human–robot collaboration demands communication beyond conventional alarms and speech. Nonverbal auditory communication offers a complementary modality, yet its role in I5.0 remains unmapped.
Tom Schmid +3 more
doaj +1 more source
X-Ray Reflectivity Study of Reactive DC Sputter Deposited Al2O3 Thin Films
X-ray reflection was performed on Al2O3 thin films obtained by dc magnetron sputtering of aluminium in an argon/oxygen atmosphere. Two kind of films (amorphous and γ-Al2O3) were deposited on polished silicon wafers by conventional sputtering and ...
A. Bender, E. Schippel
doaj +1 more source
STF Optimierung von single-bit CT ΣΔ Modulatoren basierend auf skalierten Filterkoeffizienten [PDF]
Die vorliegende Arbeit beschäftigt sich mit dem Signalübertragungsverhalten von single-bit continuous-time (CT) ΣΔ Modulatoren. Dabei liegt der Fokus der Untersuchung auf dem Peaking der Signaltransferfunktion (STF).
C. Widemann +4 more
doaj +1 more source
Determining the Electrical Charging Speed Limit of ReRAM Devices
Redox-based random-access memory (ReRAM) has the potential to successfully address the technological barriers that today’s memory technologies face. One of its promising features is its fast switching speed down to 50 ps.
M. von Witzleben +4 more
doaj +1 more source
The mechanism behind resistive switching in Cr‐doped V2O3, a prototypical Mott insulator, is revealed through spatially resolved micro‐X‐ray Diffraction and micro‐Raman studies. Applying electrical pulses leads to the creation of a filamentary conductive path.
Danylo Babich +15 more
wiley +1 more source
Die Wirkung elektromagnetischer Felder auf den Menschen Die Situation der problemrelevanten Forschung in der Bundesrepublik Deutschland (Stand September 89) unter Beruecksichtigung der Befunde im Ausland [PDF]
Available from Berufsgenossenschaft der Feinmechanik und Elektrotechnik, Koeln (DE). Inst.
Berufsgenossenschaft der Feinmechanik und Elektrotechnik, Koeln (Germany). Inst. zur Erforschung Elektrischer Unfaelle +1 more
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