Results 221 to 230 of about 102,062 (310)

Schottky Barrier Engineering in n‐Type Organic Source‐Gated Transistors Enabling High Conductance

open access: yesAdvanced Materials Technologies, EarlyView.
This study introduces a modified source electrode architecture for n‐type organic source‐gated transistors (OSGTs). By integrating Schottky and Ohmic contact regions, the design achieves a thinner depletion envelope, enhancing mobility nearly tenfold and reducing threshold voltage.
Yonghee Kim   +4 more
wiley   +1 more source

Shaping Carbon Nitrides for Advanced Macrostructures

open access: yesAdvanced Materials Technologies, EarlyView.
This review examines how carbon nitride can be shaped through a range of printing and interfacial assembly methods. By bringing together additive manufacturing and liquid–liquid structuring concepts, carbon nitride is moving beyond its traditional powder‐based photocatalyst form toward digitally designed robust macroscale architectures with high design
Simona Baluchová, Baris Kumru
wiley   +1 more source

Controlling Film Formation in Inkjet‐printed MAPbBr3 Through Graphene Incorporation for Enhanced Photodetection

open access: yesAdvanced Materials Technologies, EarlyView.
This work highlights the impact of incorporating graphene nanoflakes into precursor inks of MAPbBr3 for inkjet‐printed optoelectronic device applications. A substantial modification of the crystallization dynamics is reported despite miniscule concentrations.
Kenneth Lobo   +12 more
wiley   +1 more source

Understanding Ionic Flow in Nanofluidic Blind‐Hole Anodic Aluminum Oxide (AAO) Membranes for Osmotic Energy Generation

open access: yesAdvanced Materials Technologies, EarlyView.
Anodic aluminum oxide (AAO) membranes have traditionally served as structural supports in osmotic energy systems. Here, blind‐hole AAO membranes are demonstrated as active ion‐selective platforms with tunable nanopore structures. By balancing membrane resistance, ion selectivity, and flux, enhanced performance is achieved, delivering a maximum power ...
Khanh Nhien Vu   +6 more
wiley   +1 more source

Aluminum Oxynitride‐Engineered Transparent Aluminum Nitride Resistive Memory for Low‐Leakage Multilevel Switching in Micro‐LED Pixels

open access: yesAdvanced Materials Technologies, EarlyView.
An AlON interfacial layer is engineered within an AlN switching layer to enable transparent RRAM with four stable resistance states. The device achieves low‐voltage multilevel switching and a high HRS, allowing precise grayscale modulation and preventing light leakage in micro‐LEDs operated at VDD = 2.7 V.
Sung Keun Choi   +7 more
wiley   +1 more source

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