Results 111 to 120 of about 16,176,000 (252)

Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing

open access: yesAdvanced Functional Materials, EarlyView.
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin   +7 more
wiley   +1 more source

Sub-series 2: Publications

open access: yes, 1994
Bimonthly magazine discussing topics related to aviation and model airplane engines including collecting, restoring, maintaining, and identifying engines, along with ...
The Model Museum, Dannels, Timothy J.
core  

Bacterial Cellulose‐Based Bilayer Passive Cooler for High‐Performance Radiative/Evaporative Cooling

open access: yesAdvanced Functional Materials, EarlyView.
A sustainable bilayer passive cooler based on bacterial cellulose integrates radiative and evaporative cooling for efficient zero‐energy temperature reduction. The scalable, low‐carbon material shows strong potential for food preservation, low‐temperature storage, and cold‐chain logistics.
Yibing Zhang   +6 more
wiley   +1 more source

Disorder‐Broadened Topological Hall Phase and Anomalous Hall Scaling in FeGe

open access: yesAdvanced Functional Materials, EarlyView.
By systematically introducing defects into FeGe via ion‐beam modification, we demonstrate that disorder broadens the temperature regime over which the topological Hall effect ‐ a signature of skyrmions or other chiral textures — appears, while also increasing its magnitude.
Chaman Gupta   +11 more
wiley   +1 more source

An empirical model of proton RBE based on the linear correlation between x-ray and proton radiosensitivity. [PDF]

open access: yesMed Phys, 2022
Flint DB   +10 more
europepmc   +1 more source

Unified Phase‐Field Framework for Antiferroelectric, Ferroelectric and Dielectric Phases: Application to HZO Thin Films

open access: yesAdvanced Functional Materials, EarlyView.
HfxZr1−xO2${\rm Hf}_x{\rm Zr}_{1-x}{\rm O}_2$ offers CMOS‐compatible nanoscale ferroelectricity yet suffers from a high Ec${\rm E}_c$ demanding large operating voltages. A unified phase‐field framework spanning AFE/FE/DE phases shows how FE grains soften neighboring AFE grains over λ$\lambda$ ≈$\approx$ 22–37 nm.
P. Pankaj   +4 more
wiley   +1 more source

An Empirical Model of Ion-Selective Organic Electrochemical Transistors. [PDF]

open access: yesAdv Mater Technol
Nath SD   +4 more
europepmc   +1 more source

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