Results 151 to 160 of about 73,847 (208)

Integrating ZnO/Ag2O@g‐C3N4‐Based Nanocomposites Into a Carrageenan Matrix to Efficiently Remove Heavy Metals From Water

open access: yesAdvanced Materials Interfaces, EarlyView.
ABSTRACT This research focused on characterizing graphitic carbon nitride (g‐C3N4) nanocomposites incorporated with ZnO and Ag2O nanoparticles, and carrageenan to remove heavy metals. The ZnO/Ag2O@ g‐C3N4 and ZnO/Ag2O/g‐C3N4@Carr nanocomposites demonstrated thermal stability of 97.40% (108.81°C) and 82.80% (188.99°C) for TGA.
Feziwe B. Mamba   +2 more
wiley   +1 more source

Exploring the Potential of Zero‐Dimensional Carbon Nanomaterials in Photoluminescent, Electrochemiluminescent and Electrochemical Sensors

open access: yesAdvanced Materials Interfaces, EarlyView.
Zero‐dimensional carbon nanomaterials are presented as multifunctional platforms linking structure, property, and sensing performance. Surface engineering and heteroatom doping modulate electron‐transfer and luminescent behavior, enabling electrochemical, photoluminescent, and electrochemiluminescent detection. Fundamental design principles, analytical
Gustavo Martins   +8 more
wiley   +1 more source

Plasma‐Sequence‐Engineered Atomic Layer Deposition of Ultra‐Thin SiNx for Enhanced Etching Resistance in Extreme Ultraviolet Pellicles

open access: yesAdvanced Materials Interfaces, EarlyView.
Plasma‐sequence‐engineered ALD (PSE‐ALD), based on sequential NH3 and N2 plasma pulses, enables ultrathin, dense SiNx films. ToF‐MS analysis confirms ligand removal via HCl evolution, while increased film density indicates network densification. The resulting SiNx coating provides robust protection of graphite under H2 plasma exposure.
Hye‐Young Kim   +7 more
wiley   +1 more source

Correlation Between Voltammetry of Immobilized Particles and Mott-Schottky Analysis of Metal Corrosion Patinas. [PDF]

open access: yesChemphyschem
Porcaro M   +6 more
europepmc   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

open access: yesAdvanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci   +12 more
wiley   +1 more source

Home - About - Disclaimer - Privacy