Results 131 to 140 of about 3,852 (169)
Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration
Advanced Electronic Materials, EarlyView.Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song +10 more
wiley +1 more source
Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
Advanced Electronic Materials, EarlyView.This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez +10 more
wiley +1 more source
Stochastic‐MTJ Sampler Arrays for In‐Array Monte–Carlo Estimation
Advanced Electronic Materials, EarlyView.A low‐energy‐barrier magnetic tunnel junction array is operated as a probability‐domain sampler: each cell's random switching, programmed through a shared digital‐to‐analog converter, makes the per‐column multiply–accumulate an unbiased Monte–Carlo expectation estimator that returns both a mean and a calibrated uncertainty.
Ran Zhang +6 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.Composite‐based flexible electronics integrate biodegradable polymers, conductive networks, and multilayer device architectures to balance electrical performance, mechanical durability, and controlled degradation. Interfacial engineering and encapsulation regulate transport stability and operational lifetime, while programmed disassembly enables ...
Sayam, Sangho Cho
wiley +1 more source
Artificial Intelligence for Fluorite Ferroelectric Materials: From Discovery to Optimization
Advanced Electronic Materials, EarlyView.Artificial intelligence accelerates the discovery and optimization of HfO2‐based fluorite ferroelectrics by linking synthesis, structure, properties, and device performance. Machine learning, deep‐learning analysis, and AI‐driven atomistic modeling enable predictive design, dopant screening, and closed‐loop optimization toward next‐generation ...
Faizan Ali +3 more
wiley +1 more source
Performance and Environmental Impact of Flexible Temperature Sensors on Cellulose‐Based Substrate
Advanced Electronic Materials, EarlyView.Toward low‐environmental‐impact approach to thin‐film sensors fabrication using natural ingredient‐based triacetyl cellulose (TAC) substrate. Temperature sensors are fabricated and characterized based on thermal and mechanical performance. Substrate recovery is demonstrated by facile dissolution of a Mo‐based sensor in deionized water.
Dianne C. Corsino +14 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.This review surveys organic electrochemical transistors as core building blocks for energy‐autonomous bio‐integrated electronics. We outline device physics, OMIEC materials, and electrolyte effects that enable sub‐volt, high‐gain operation, and discuss direct coupling with mechanical, thermal, and optical energy harvesters to realize battery‐free ...
Jonggeun Park +3 more
wiley +1 more source
Atomic‐Scale Mechanisms of Anisotropic Thermal Decomposition in GeSn Alloys With Stepwise Pinning
Advanced Electronic Materials, EarlyView.Combining in situ TEM with DFT calculations, this work elucidates atomic‐scale anisotropic thermal decomposition in GeSn films, identifying laminar receding in defect‐free regions and stepwise pinning at stacking faults. Driven by crystallographic anisotropy and defect‐mediated energetic penalties, these findings establish a physical framework for ...
YiXin Wang +6 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.Wire resistance and sneak paths severely compromise the performance of large memristor crossbars. A predictive closed‐form distributed line‐resistance model, combined with a fourmatrix geometry‐averaging algorithm, eliminates these parasitic limitations.
Davide Rossetti +5 more
wiley +1 more source