Results 111 to 120 of about 313,235 (301)

On the Transition of a Non-Equilibrium System to an Equilibrium System [PDF]

open access: yesarXiv, 2015
It is shown that the most important feature of Non-Equilibrium Thermodynamics is not the entropy production, but the organization of the currents in order to flow. This is also needed to obtain the maximum entropy in the equilibrium state, as is required by Equilibrium Thermodynamics.
arxiv  

Oxygen Doping Enables Tailored Built‐In Electric Fields in FeOCl/g‐C3N4 Heterojunctions for Enhanced Peroxymonosulfate Activation

open access: yesAdvanced Functional Materials, EarlyView.
Oxygen‐doping modulated g‐C3N4 support enables a strong built‐in electric field (BIEF) in FeOCl‐OCN.This enhanced BIEF induces the rearrangement of Fe(II)/Fe(III) in FeOCl, which subtly improves intermediates adsorption and also reduces the energy barrier of *O production, thereby achieving efficient PMS activation with 1O2 and Fe(IV)= O as the primary
Ying Zeng   +9 more
wiley   +1 more source

Exploring quantum thermodynamics with NMR

open access: yesJournal of Magnetic Resonance Open, 2023
Quantum thermodynamics seeks to extend non-equilibrium stochastic thermodynamics to small quantum systems where non-classical features are essential to its description.
C.H.S. Vieira   +4 more
doaj  

Exploring Electronic States and Ultrafast Electron Dynamics in AlInP Window Layers: The Role of Surface Reconstruction

open access: yesAdvanced Functional Materials, EarlyView.
This study examines the surface characteristics of AlInP (001), crucial for advanced solar cells and photoelectrochemical devices. Using theoretical modeling and experiments, it identifies how phosphorus‐rich and indium‐rich surfaces create mid‐gap states that pin the Fermi level and influence ultrafast electron dynamics.
Mohammad Amin Zare Pour   +11 more
wiley   +1 more source

Gate‐Tunable Hole Transport in In‐Plane Ge Nanowires by V‐Groove Confined Selective Epitaxy

open access: yesAdvanced Functional Materials, EarlyView.
Ge nanowires are promising for hole spin‐based quantum processors, requiring direct integration onto Si wafers. This work introduces V‐groove‐confined selective epitaxy for in‐plane nanowire growth on Si. Structural and low‐temperature transport measurements confirm their high crystalline quality, gate‐tunable hole densities, and mobility.
Santhanu Panikar Ramanandan   +11 more
wiley   +1 more source

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