Results 191 to 200 of about 671,078 (298)

Study of equivalent circuit of GaN based laser chip and packaged laser. [PDF]

open access: yesSci Rep
Wang J   +10 more
europepmc   +1 more source

Carbon Contacts to Proteins Enable Robust, Biocompatible Electronic Junctions with Near‐Activation‐less Conduction Down to 10 K

open access: yesAdvanced Functional Materials, EarlyView.
A robust solid‐state protein junction with a semi‐transparent eC/Au electrode allows photoexcitation of the bacterio‐rhodopsin, bR layer, to isomerize the bR retinal. The resulting photo‐response shows the protein is functional in the solid‐state junction.
Shailendra K. Saxena   +5 more
wiley   +1 more source

Color Routing and Beam Steering of Single‐Molecule Emission with a Spherical Silicon Nanoantenna

open access: yesAdvanced Functional Materials, EarlyView.
We experimentally demonstrate broadband directional emission from single molecules using a single spherical silicon nanoparticle assembled via DNA origami. By varying nanoparticle (NP) size and emitter position, we achieve unidirectional emission, beam steering, and color routing at the nanoscale, revealing modal interference as the underlying ...
María Sanz‐Paz   +9 more
wiley   +1 more source

Fabrication of Pyridinic Nitrogen‐Functionalized Carbon Cloth for High‐Performance Iron‐Chromium Flow Batteries

open access: yesAdvanced Functional Materials, EarlyView.
The carbon cloth electrode with targeted pyridinic nitrogen doping, achieved via urea pyrolysis, effectively modulates the adsorption of Cr(II) species and enhances electron transfer, leading to significantly improved kinetics of the Cr(II)/Cr(III) reaction. The material demonstrates a high discharge capacity of 689.3 mAh and an energy efficiency of 72.
Jinfeng Yi   +9 more
wiley   +1 more source

Multibit Ferroelectric HfZrO Memcapacitor for Non‐Volatile Analogue Memory and Reconfigurable Electronics

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric memcapacitors enable non‐volatile, voltage‐programmable capacitance tuning for adaptive electronics. A TiN/HfZrO/TiN device stack demonstrates more than eight stable capacitance states within a 24 pF memory window in compact 60 ×$\times$ 60 μm2$\umu{\rm m}^{2}$ devices at low operating voltages.
Deepika Yadav   +6 more
wiley   +1 more source

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