Results 151 to 160 of about 3,739 (304)

Fundamental Challenges, Physical Implementations, and Integration Strategies for Ising Machines in Large‐Scale Optimization Tasks

Advanced Electronic Materials, EarlyView.
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley   +1 more source

Electrode‐Engineered Dual‐Mode Multifunctional Lead‐Free Perovskite Optoelectronic Memristors for Neuromorphic Computing

Advanced Electronic Materials, EarlyView.
A lead‐free perovskite memristive solar cell structure that call emulate both synaptic and neuronal functions controlled by light and electric fields depending on top electrode type. ABSTRACT Memristive devices based on halide perovskites hold strong promise to provide energy‐efficient systems for the Internet of Things (IoT); however, lead (Pb ...
Michalis Loizos, Konstantinos Rogdakis, Konstantinos Chatzimanolis, Katerina Anagnostou, Emmanuel Kymakis   +4 more
wiley   +1 more source

Queueing Behavior over a Gilbert-Elliott Packet Erasure Channel [PDF]

, 2011
This thesis explores the queueing performance of a wireless communication system that transmits packets over a correlated erasure channel using the IEEE 802.11 protocol suit.
Cai, Yi
core  

Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration

Advanced Electronic Materials, EarlyView.
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song, Chenxi Yu, Shangze Li, Dijiang Sun, Jiajia Zhang, Haotong Zhu, Xiaomin Xiao, Xionghao Qin, Xiaoyan Liu, Xing Zhang, Jinfeng Kang   +10 more
wiley   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

People Counting and Positioning Using Low‐Resolution Infrared Images for FeFET‐Based In‐Memory Computing

Advanced Electronic Materials, EarlyView.
In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar, Li Zhang, Alexander Rehmer, Marc Lupp, Subhashree Baskaran, Osama Abdelaal, Franz Müller, Nandakishor Yadav, Bing Li, Thomas Kämpfe   +9 more
wiley   +1 more source

A Dual‐Memory Ferroelectric Transistor Emulating Synaptic Metaplasticity for High‐Speed Reservoir Computing

Advanced Electronic Materials, EarlyView.
A CMOS‐compatible ferroelectric transistor harnesses the interplay between stable gate polarization memory and volatile non‐quasi‐static channel charge dynamics to emulate how biological synapses regulate their own plasticity. This brain‐inspired dual‐memory mechanism, realized in a single device, enables a physical reservoir computer that solves ...
Yifan Wang, Muhammad Sakib Shahriar, Salma Soliman, Noah Vaillancourt, Lance Fernandes, Andrea Padovani, Asif Islam Khan, Md Sakib Hasan, Raisul Islam   +8 more
wiley   +1 more source

Performance Analysis of Coded $M$-ary Orthogonal Signaling Using Errors-and Erasures Decoding Over Frequency-Selective Fading Channels

, 2001
The performance of $M$-ary orthogonal signaling schemes employing Reed–Solomon (RS) codes and redundant residue number system (RRNS) codes is investigated over frequency-selective Rayleigh fading channels.
Yang, L-L., Hanzo, L.
core  

Logic Functionality and Circuit Design of In2Se3‐Based Split‐Gate Ferroelectric Field‐Effect Transistor for Zero‐Trust Applications

Advanced Electronic Materials, EarlyView.
ABSTRACT Van der Waals ferroelectric materials are emerging as key building blocks for future logic devices and integrated circuits. Among them, α‐In2Se3 offers a unique combination of robust room temperature ferroelectricity and semiconducting behavior.
Ankita Ram, Cédric Marchand, Shehr Bano Masood, Aymen Mahmoudi, Takashi Taniguchi, Kenji Watanabe, Bernard Doudin, Abdelkarim Ouerghi, Ian O'Connor, Alexei Gruverman, Jean‐François Dayen   +10 more
wiley   +1 more source

Physics‐Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory

Advanced Electronic Materials, EarlyView.
For advanced 3D NAND flash memory, a unified compact model for SPICE is proposed that spans from the intrinsic unit cell to the full string and captures the electrostatic coupling with adjacent inhibit strings. It can successfully predict read behavior, program/erase dynamics, and interactions between neighboring cells, reflecting array‐level behavior ...
Ilho Myeong, Seonho Shin, Ickhyun Song
wiley   +1 more source