Results 171 to 180 of about 649,705 (315)
Exploiting Outage and Error Probability of Cooperative Incremental Relaying in Underwater Wireless Sensor Networks. [PDF]
Nasir H +6 more
europepmc +1 more source
Bit Error Probability and Encoder Structure
. The problem of decoding a binary linear code used over a binary symmetric channel so as to minimize bit error probability, rather than codeword error probability, is studied.
Houshou Chen, Sean Coffey
core
A Dislocation Perspective on Strength and Toughness in Ceramics
Dislocations in ceramics enjoy a long but yet under‐appreciated history. The three research waves for dislocations in ceramics highlight the topic evolution over the last 90 years. This review focuses on the impact of dislocation on strength and toughness in ceramics.
Xufei Fang
wiley +1 more source
Use of attribute association error probability estimates to evaluate quality of medical record geocodes. [PDF]
Klaus CA +4 more
europepmc +1 more source
Grain boundary triple junctions are an essential ingredient of the microstructure of polycrystalline materials. In this study, a triple junction is observed using atomic‐resolution scanning transmission electron microscopy and characterized. Computer simulations reveal that the junction has a dislocation character that is determined by the joining ...
Tobias Brink +4 more
wiley +1 more source
Performance analysis over q-Weibull fading channels for symbol error probability evaluation using a tighter Gaussian Q approximation. [PDF]
Samal S +5 more
europepmc +1 more source
Energy dissipation and error probability in fault-tolerant binary switching. [PDF]
Fashami MS +2 more
europepmc +1 more source
Correspondence On the Selection of Error Measures for Comparisons Among Forecasting Methods [PDF]
Clements and Hendry (1993) proposed the Generalized Forecast Error Second Moment (GFESM) as an improvement to the Mean Square Error in comparing forecasting performance across data series.
JS Armstrong, Robert Fildes
core
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone +11 more
wiley +1 more source
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source

