Results 341 to 350 of about 529,742 (380)
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Spatial variation of the etch rate for deep etching of silicon by reactive ion etching
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1997The macroscopic uniformity of deep etching into silicon by reactive ion etching (RIE) with a SF6−O2 plasma was studied. The spatial variation of the etch rate across a 4 inch wafer in a single wafer system is a function of the process parameters and the configuration of the etch chamber.
Ole Hansen +3 more
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Dental Materials, 2009
Etch and resin infiltration morphologies were compared for three self-etch adhesive (SEA) systems and eleven model etch-and-rinse (ERA) systems using various phosphoric acid (PA) concentrations with Adper Single Bond Plus (SB) adhesive. Matches for the morphologies were made between each SEA system and one of the PA/SB systems and bond strength ...
Robert L. Erickson +2 more
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Etch and resin infiltration morphologies were compared for three self-etch adhesive (SEA) systems and eleven model etch-and-rinse (ERA) systems using various phosphoric acid (PA) concentrations with Adper Single Bond Plus (SB) adhesive. Matches for the morphologies were made between each SEA system and one of the PA/SB systems and bond strength ...
Robert L. Erickson +2 more
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Etch Profile Development in Spray Etching Processes
Journal of The Electrochemical Society, 1992An investigation to develop a better understanding of the fundamentals behind the operation of spray-etching processes revealed several interesting phenomena that explain some of the difficulties encountered during operation. Higher spray pressures are required for the top sides than for the bottom sides in order to achieve equal amounts of etching on ...
Christos Georgakis +4 more
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The article examines etching as a unique technique of graphic art, its historical development, technical features and place in the context of world artistic culture. The influence of technological changes on the evolution of etching and its application in various historical eras is analyzed.
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Mechanistic framework for dry etching, beam assisted etching and tribochemical etching
Microelectronic Engineering, 1996Abstract A mechanistic framework is presented for impact assisted etch reactions. The consecutive reaction steps are assumed to be activated thermally and in parallel mechanically by fast particle impacts. The model explains the complicated temperature dependencies observed in dry etching and beam assisted etching, and it correlates the side wall ...
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The Mechanism of Over-Etch in Poly-Gate Etching
ECS Transactions, 2010The over-etch mechanism in poly-gate etching is investigated. The relationships between the final poly-gate profile and the over-etch process parameters are presented. The oxygen flow and temperature of electrostatic chuck (ESC) both sensitively contribute to the notch of the poly-gate profile. Two corresponding process models are suggested.
Xia Yang +5 more
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Proceedings, annual meeting, Electron Microscopy Society of America, 1968
Freeze-etching, as a tool in the preparation of biological specimens for electron microscopy, has seen relatively little use since it was introduced in 1957. The involved procedure, originally described, and, until recently, the cost of special equipment, must certainly have played a part in the failure of freeze-etching to become a commonly used ...
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Freeze-etching, as a tool in the preparation of biological specimens for electron microscopy, has seen relatively little use since it was introduced in 1957. The involved procedure, originally described, and, until recently, the cost of special equipment, must certainly have played a part in the failure of freeze-etching to become a commonly used ...
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Microwave etching device for reactive ion etching
Materials Science and Engineering: A, 1991Abstract Electron cycloton resonance (ECR) plasmas are different from glow dischargeplasmas and introduce new complexities and possibilities. For dry etching processes (reactive ion etching), the operation in a low pressure regime and the high etch rates achievable at low ion energies,which can be controlled by an independently adjustable r.f.
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Selective Etching of Silicon from Ti3 SiC2 (MAX) To Obtain 2D Titanium Carbide (MXene).
Angewandte Chemie, 2018Mohamed Alhabeb +7 more
semanticscholar +1 more source
International Laser Science Conference, 1986
There are three categories of laser-assisted chemical reactions which have been employed to etch metals, semiconductors, and other inorganic materials. Lasers can be used to locally heat a solid to accelerate the rate of a thermally activated process. This is the most universally applicable method of laser-induced etching.
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There are three categories of laser-assisted chemical reactions which have been employed to etch metals, semiconductors, and other inorganic materials. Lasers can be used to locally heat a solid to accelerate the rate of a thermally activated process. This is the most universally applicable method of laser-induced etching.
openaire +1 more source