Results 191 to 200 of about 1,735,438 (335)

Atomic Layer Deposition of Disordered p‐Type SnO Using a Heteroleptic Tin(II) Precursor: Influence of Disorder on P‐Channel SnO Thin‐Film Transistor Characteristics

open access: yesAdvanced Electronic Materials, EarlyView.
Disordered p‐type SnO thin‐films are deposited via atomic layer deposition using a novel heteroleptic precursor. These films enable low‐temperature fabrication of thin‐film transistors with excellent stability and mobility. Their potential compatibility with flexible substrates and integration with n‐type IGZO transistors makes them candidates for ...
Benjamin J. Peek   +15 more
wiley   +1 more source

Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez   +10 more
wiley   +1 more source

Ion‐Gating Reservoir Computing for Preprocessing‐Free Speech Recognition from Throat Vibrations

open access: yesAdvanced Electronic Materials, EarlyView.
This work presents a throat‐mounted mechanoelectric sensor integrated with an ion‐gel/graphene reservoir device for on‐device speech recognition. The system converts raw biomechanical vibrations into rich nonlinear current dynamics, enabling efficient classification through a simple linear readout. The approach highlights a compact and tunable physical‐
Daiki Nishioka   +5 more
wiley   +1 more source

Low‐Temperature Annealed Cu/Al Bilayer Architecture for Highly Stable Flexible Metal‐Mesh Transparent Electrodes

open access: yesAdvanced Electronic Materials, EarlyView.
A Cu/Al bilayer design is developed to protect copper metal‐mesh transparent electrodes from oxidation. The ultrathin Al layer self‐passivates into a dense Al2O3 barrier, ensuring excellent stability under harsh conditions. The resulting electrodes combine high conductivity and transparency, enabling reliable operation in flexible touch sensors and ...
Yourong Shu   +11 more
wiley   +1 more source

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