Results 201 to 210 of about 1,614,039 (386)
European Union and German law on co-existence: Individualisation of a systemic problem [PDF]
, 2011 Gerd Winter, Sarah Stoppe-Ramadan
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Critical Assessment of Contact Resistance and Mobility in Tin Perovskite Field‐Effect Transistors
Advanced Electronic Materials, EarlyView.Contact resistance and field‐effect transistor (FET) mobility of Cs0.15FA0.85SnI3 tin perovskites are determined using gated four‐point‐probe (4PP) FET measurements in a Hall bar geometry. The results indicate that contact resistance can significantly impact transistor characteristics, often leading to underestimation or overestimation of FET mobility ...
Youcheng Zhang +9 more
wiley +1 more source
Judicial Labor Relations in the European Union
Acta Universitatis Danubius: Administratio, 2015 The European social law represents the branch of the international labor law consisting of the regulations in this matter adopted by the Council of Europe, respectively the European Union. If the instruments elaborated within the Council of Europe are,
Georgeta MODIGA
doaj
Advanced Electronic Materials, EarlyView.Combining high polymer orientation of n‐type copolymers by temperature rubbing and sequential doping with N‐DMBI results in a strong improvement of electrical conductivity and thermoelectric power factors reaching up to 9.8 ± 1.6 S cm−1 and 8 ± 3 µW m−1.K2, respectively.
Shubhradip Guchait +7 more
wiley +1 more source
State liability for violation of European Union law—a Polish perspective [PDF]
, 2012 Nina Półtorak
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Understanding Refugee Law in an Enlarged European Union Theory [PDF]
The present article seeks to explore how asylum law is formed, transformed and reformed in Europe, what its effects are on state practice and refugee protection in the Baltic and Central European candidate countries, and what this process reveals about ...
Gregor Noll, +2 more
core
On the Enhanced p‐Type Performance of Back‐Gated WS2 Devices
Advanced Electronic Materials, EarlyView.A scalable method for directly growing WS2 enables robust and persistent p‐type behavior in back‐gated FETs, independent of metal contacts, thickness, or ambient conditions. Electrical measurements reveal minimal Schottky barrier heights and stable thermionic transport, while first‐principles simulations suggest tungsten vacancies or WO3 species as the
Carlos Marquez +14 more
wiley +1 more source