Results 211 to 220 of about 1,416,187 (309)

Results of a Geant4 benchmarking study for bio-medical applications, performed with the G4-Med system. [PDF]

Med Phys
Arce P, Archer JW, Arsini L, Bagulya A, Bolst D, Brown JMC, Caccia B, Chacon A, Cirrone GAP, Cortés-Giraldo MA, Cutajar D, Cuttone G, Dondero P, Dotti A, Faddegon B, Fattori S, Fedon C, Guatelli S, Haga A, Incerti S, Ivanchenko V, Konstantinov D, Kyriakou I, Le A, Li Z, Maire M, Malaroda A, Mancini-Terracciano C, Mantero A, Michelet C, Milluzzo G, Nicolanti F, Novak M, Omachi C, Pandola L, Pensavalle JH, Perales Á, Perrot Y, Petringa G, Pozzi S, Quesada JM, Ramos-Méndez J, Romano F, Rosenfeld AB, Safavi-Naeini M, Sakata D, Sarmiento LG, Sasaki T, Sato Y, Sciuto A, Sechopoulos I, Simpson EC, Stanzani R, Tomal A, Toshito T, Tran HN, White C, Wright DH.   +57 more
europepmc   +1 more source

Evidence of Long‐Range Dzyaloshinskii–Moriya Interaction at Ferrimagnetic Insulator/Nonmagnetic Metal Interfaces

Advanced Functional Materials, EarlyView.
This study demonstrates that in sputter‐deposited Tb3Fe5O12 (TbIG)/nonmagnetic metal (NM) heterostructures, the interfacial Dzyaloshinskii–Moriya Interaction (DMI) originates at the TbIG/NM interface. Furthermore, measurements suggest a significant interfacial DMI arising from a second non‐local interface, created by inserting a Cu spacer layer between
Stefano Fedel, Mario Villa, Silvia Damerio, Emre Demiroglu, Caner Deger, Jaume Gazquez, Can O. Avci   +6 more
wiley   +1 more source

Direct observations of cross-scale wave-particle energy transfer in space plasmas. [PDF]

Sci Adv
Li JH, Zhou XZ, Liu ZY, Wang S, Omura Y, Li L, Yue C, Zong QG, Le G, Russell CT, Burch JL.   +10 more
europepmc   +1 more source

ErMn6Sn6: A Promising Kagome Antiferromagnetic Candidate for Room‐Temperature Nernst Effect‐Based Thermoelectrics

Advanced Functional Materials, EarlyView.
This work investigates the Nernst effect in the Kagome magnet ErMn6Sn6 which exhibits both topological and anomalous Nernst effects with the anomalous Nernst coefficient reaching 1.71 µV K⁻¹ at 300 K. This value surpasses that of most canted antiferromagnetic materials, making ErMn6Sn6 a promising candidate for advancing thermoelectric devices based on
Olajumoke Oluwatobiloba Emmanuel, Shuvankar Gupta, Xianglin Ke   +2 more
wiley   +1 more source

Armouring of a Frictional Interface by Mechanical Noise. [PDF]

J Stat Phys
El Sergany E, Wyart M, de Geus TWJ.
europepmc   +1 more source

Al₂O₃‐Functionalized Carbon Nanomembranes with Enhanced Water Permeance and Selectivity for Efficient Air Dehumidification

Advanced Functional Materials, EarlyView.
Carbon nanomembranes with ultra‐thin Al2O3 functionalization are less than 15 nm thin and exhibit outstanding permeation performance with a water vapor/nitrogen selectivity higher than 1 × 104, twice that of pristine CNMs, and an exceptionally high water vapor permeation rate for potential applications in air dehumidification.
Jan Biedinger, Zhen Yao, Martin Wortmann, Michael Westphal, Natalie Frese, Raphael Gehra, Niklas Brandt, Bernhard Peter Kaltschmidt, Andreas Hütten, Armin Gölzhäuser, Günter Reiss   +10 more
wiley   +1 more source

Magnetar emergence in a peculiar gamma-ray burst from a compact star merger. [PDF]

Natl Sci Rev
Sun H, Wang C, Yang J, Zhang BB, Xiong S, Yin YI, Liu Y, Li Y, Xue W, Yan ZY, Zhang C, Tan W, Pan H, Liu J, Cheng H, Zhang Y, Hu J, Zheng C, An Z, Cai C, Cai Z, Hu L, Jin C, Li D, Li X, Liu H, Liu M, Peng W, Song L, Sun S, Sun X, Wang X, Wen X, Xiao S, Yi S, Zhang F, Zhang W, Zhang X, Zhang Y, Zhao D, Zheng S, Ling Z, Zhang SN, Yuan W, Zhang B.   +44 more
europepmc   +1 more source

Concurrent Interface Passivation and Contact Work Function Tuning in Organic Self‐Aligned Gate Transistors and Complementary Circuits Using Phosphonic Acid Self‐Assembled Monolayers

Advanced Functional Materials, EarlyView.
Self‐aligned gate transistors are developed with a single‐step dielectric passivation and fine‐tuning of source/drain electrode work function using phosphonic acid self‐assembled monolayers (SAM). This transistor architecture minimizes overlap capacitances and access resistance.
Linqu Luo, Mohamad Insan Nugraha, Hendrik Faber, Shaoxian Li, Chrysa Aivalioti, Bahaaeddin Irziqat, Ricardo Ruvalcaba, Temur Maksudov, Yu‐ying Yang, Harold F. MazoMantilla, Lazaros Panagiotidis, Mohamed Nejib Hedhili, Furkan H. Isikgor, Leonidas Tsetseris, Shadi Fatayer, Martin Heeney, Thomas D. Anthopoulos   +16 more
wiley   +1 more source

Influence of particle size and dielectric environment on radiative lifetimes of colloidal cadmium selenide single photon emitters. [PDF]

Sci Rep
Manojkumar V, Varier GK, Vathsan R, Nandakumar P.   +3 more
europepmc   +1 more source

Ultra‐Fast Non‐Volatile Resistive Switching Devices with Over 512 Distinct and Stable Levels for Memory and Neuromorphic Computing

Advanced Functional Materials, EarlyView.
A materials and device design concept that comprises a self‐assembled ultra‐thin epitaxial ion‐transporting layer, an amorphous oxide overcoat oxygen‐blocking layer, and a partial filament formed during an electroforming step is proposed for low‐current multilevel resistive switching devices.
Ming Xiao, Markus Hellenbrand, Nives Strkalj, Babak Bakhit, Zhuotong Sun, Nikolaos Barmpatsalos, Dovydas Joksas, Hongyi Dou, Zedong Hu, Ping Lu, Samip Karki, Sundar Kunwar, Jonathan D. Major, Aiping Chen, Haiyan Wang, Quanxi Jia, Adnan Mehonic, Judith L. MacManus‐Driscoll   +17 more
wiley   +1 more source