Results 171 to 180 of about 2,062,206 (232)

O Radical‐Induced n‐to‐p Transition in PbS Quantum Dots Enabling Enhanced and Stable Photogating in QD/IGZO SWIR Phototransistors

open access: yesAdvanced Materials Technologies, EarlyView.
An O radical‐induced n‐to‐p transition in PbS quantum dots (QDs) is achieved via atmospheric Ar/O2 treatment, enabling favorable band alignment and stable photogating in PbS QD/IGZO phototransistors. Interfacial defect passivation and Fermi‐level modulation, confirmed by XPS and UPS analyses, effectively suppress dark current, induce a positive VTH ...
MD Redowan Mahmud Arnob   +4 more
wiley   +1 more source

Defect‐Engineered ZnO Nanowire Arrays for Flexible Room‐Temperature Hydrogen Sensors

open access: yesAdvanced Materials Technologies, EarlyView.
Fabrication process of patterned ZnO nucleation sites on a flexible polyimide (PI) substrate. Top/tilted‐view SEM images of ordered ZnO nanoflower arrays confined within patterned circular regions. AFM topography map with height data revealing a disk‐array structure, where the patterned regions (marked by a red dot circle) are elevated by ∼2 µm ...
Jun‐Ting Wang   +7 more
wiley   +1 more source

Surrogate‐Optimized Flow‐Guided Miniature Condenser for Rapid Exhaled Glucose Detection

open access: yesAdvanced Materials Technologies, EarlyView.
A surrogate‐optimized miniature condenser guides humid exhaled flow toward cold surfaces to accelerate exhaled breath condensate collection. By improving vapor access within a compact footprint, the design increases sample yield. This enables post‐collection enrichment and rapid colorimetric glucose detection from dilute exhaled biomarkers within a 5 ...
Yiming Thomas Lu   +6 more
wiley   +1 more source

Amorphous IGZO, Crystalline IGO, Amorphous IGZO Triple Active Layer With 2D Electron Gas at Both Interfaces for High Performance TFTs

open access: yesAdvanced Materials Technologies, EarlyView.
The dual‐gate coplanar a‐IGZO/C‐IGO/a‐IGZO TFT is investigated, exhibiting a high filed‐effect mobility of 53.81 cm2 V−1s−1 with excellent stability. The amorphous IGZO layer provides smooth surface, which carrier scattering and high‐quality interface between gate insulator and active layer.
Solbee Lee   +4 more
wiley   +1 more source

High Throughput Aerosol Jet Printing to Operationalize High Aspect Ratio Patterning

open access: yesAdvanced Materials Technologies, EarlyView.
High‐throughput aerosol jet printing poses distinct limiting mechanisms to the printing process. These include rapidly changing ink chemistries, atomization instabilities, and liquid‐phase spreading. The combination of in‐line heating, process monitoring, and traditional optimization procedures enables rapid printing of high‐aspect‐ratio structures ...
Bella I. Guyll   +4 more
wiley   +1 more source

Home - About - Disclaimer - Privacy