Results 151 to 160 of about 2,975 (258)

Ferroelectric Dynamic‐Field‐Driven Nucleation and Growth Model for Predictive Materials‐To‐Circuit Co‐Design

open access: yesAdvanced Materials, EarlyView.
This study presents a compact dynamic‐field‐driven nucleation and growth (DFNG) model that captures ferroelectric switching behavior under arbitrary voltage waveforms. It enables extraction of time‐dependent domain wall velocity and growth dimensionality, which can then be extended to device‐level modeling.
Yi Liang   +10 more
wiley   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

open access: yesAdvanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci   +12 more
wiley   +1 more source

On the dynamics of equations with infinite delay

open access: yesOpen Mathematics, 2006
Pražák Dalibor
doaj   +1 more source

Mechanical Stress Evolution in Polycrystalline Ge Thin Films Under MeV Ion Irradiation

open access: yesAdvanced Materials Interfaces, EarlyView.
Irradiation of polycrystalline Ge thin films with 1.8 MeV Au ions alters residual stress through defect generation and lattice expansion. Increasing fluence drives progressive lattice disorder and eventual amorphization. Polycrystalline Ge resists amorphization longer than crystalline Ge, as grain boundaries facilitate defect diffusion, significantly ...
Karla J. Paz Corrales   +10 more
wiley   +1 more source

Atomic Layer Deposition of Metallic Molybdenum Dioxide Thin Films Enabling High‐k Rutile Capacitors

open access: yesAdvanced Materials Interfaces, EarlyView.
The first direct atomic layer deposition (ALD) process of molybdenum dioxide (MoO2) thin films is reported using molybdenum(II) acetate dimer (Mo2(OAc)4) and oxygen (O2) as precursors at 235°C–275°C. The films are crystalline, exceptionally pure, and conductive.
Alexey Ganzhinov   +8 more
wiley   +1 more source

Surface‐Ligand‐Dependent Excited‐State Dynamics in Aqueous CuInSe2/ZnS Quantum Dot–Chlorophyll Assemblies

open access: yesAdvanced Materials Interfaces, EarlyView.
CuInSe2/ZnS quantum dots are synthesized in water and coupled with chlorophyll to probe ligand‐controlled excited‐state interactions. Broad visible–NIR emission and high PLQY are observed. Time‐resolved measurements reveal shortened chlorophyll lifetimes, indicating dynamic quenching via Förster energy and/or charge transfer, highlighting surface ...
Özge İbiş   +3 more
wiley   +1 more source

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