Results 151 to 160 of about 500,559 (337)

Arbitrary decays for a viscoelastic equation

open access: yesBoundary Value Problems, 2011
In this paper, we consider the nonlinear viscoelastic equation ∣ u t ∣ ρ u t t - Δ u - Δ u t t + ∫ 0 t g ( t - s ) Δ u ( s ) d s + ∣ u ∣ p u = 0 , in a ...
Wu Shun-Tang
doaj  

Higher‐Order Temporal Dynamics in Complementary Charge Trap Memristor for High‐Dimensional Reservoir Computing

open access: yesAdvanced Functional Materials, EarlyView.
A complementary charge‐trap memristor (CoCTM) featuring a unique current transient with tunable overshoot‐relaxation dynamics is introduced for high‐resolution reservoir computing. By leveraging higher‐order temporal dynamics from engineered trapping layers, the device generates multiple output states from a single input, forming rich, high‐dimensional
Alba Martinez   +9 more
wiley   +1 more source

Nonlinear damped Schrodinger equation in two space dimensions

open access: yesElectronic Journal of Differential Equations, 2015
In this article, we study the initial value problem for a semi-linear damped Schrodinger equation with exponential growth nonlinearity in two space dimensions. We show global well-posedness and exponential decay.
Tarek Saanouni
doaj  

Super-Gaussian Decay of Exponentials: A Sufficient Condition [PDF]

open access: green, 2022
Benjamin H. Hinrichs   +2 more
openalex   +1 more source

Exponential decay for constrained-degree percolation

open access: yesJournal of Applied Probability
AbstractWe consider the constrained-degree percolation model in a random environment (CDPRE) on the square lattice. In this model, each vertex v has an independent random constraint $\kappa_v$ which takes the value $j\in \{0,1,2,3\}$ with probability $\rho_j$ .
Santos, Diogo C. dos, Silva, Roger W. C.
openaire   +2 more sources

Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System

open access: yesAdvanced Functional Materials, EarlyView.
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang   +6 more
wiley   +1 more source

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