Results 231 to 240 of about 12,348,205 (356)

Narrow Inhomogeneous Distribution and Charge State Stabilization of Lead‐Vacancy Centers in Diamond

open access: yesAdvanced Functional Materials, EarlyView.
Lead‐vacancy (PbV) centers in diamond are expected to be a building block of quantum network nodes owing to a large ground state splitting, which suppresses phonon interaction. In this study, multiple PbV centers with nearly identical photon frequencies and stable charge state are fabricated by high‐pressure and high‐temperature anneal up to 2300 °C ...
Ryotaro Abe   +7 more
wiley   +1 more source

SMaRT Stacking: A Methodology to Produce Optimally Layered EMI Shields with Maximal Green Index Using Fused Deposition Modeling

open access: yesAdvanced Functional Materials, EarlyView.
Electromagnetic interference (EMI) shields consisting of polylactic acid (PLA) in layers with different concentrations of multiwalled carbon nanotubes (MWCNT) are produced using additive manufacturing. The permittivity function of layers with different filler concentrations is learned using data of homogeneous and randomly ordered shields.
Stijn De Smedt   +5 more
wiley   +1 more source

Advanced Surface Engineering and Passivation Strategies of Quantum Dots for Breaking Efficiency Barrier of Clean Energy Technologies: A Comprehensive Review

open access: yesAdvanced Functional Materials, EarlyView.
This review describes the different surface engineering strategies for quantum dots that addresses the challenges associated with surface defects, highlighting their role in enhancing the performance of solar energy conversion technologies. Abstract Colloidal quantum dots (QDs) have garnered significant attention for their unique potential in clean ...
Kokilavani S., Gurpreet Singh Selopal
wiley   +1 more source

An Ultra‐Robust Memristor Based on Vertically Aligned Nanocomposite with Highly Defective Vertical Channels for Neuromorphic Computing

open access: yesAdvanced Functional Materials, EarlyView.
An ultra‐robust memristor based on SrTiO3‐CeO2 (S‐C) vertically aligned nanocomposite (VAN) achieving exceptional endurance of 1012 switching cycles via interface engineering. Artificial neural networks (ANNs) integrated with S‐C VAN memristors exhibit high training accuracy across multiple datasets.
Zedong Hu   +12 more
wiley   +1 more source

Home - About - Disclaimer - Privacy