Results 201 to 210 of about 610,121 (312)

Single‐Step Electrochemical Battery Recycling

open access: yesAdvanced Functional Materials, EarlyView.
This work demonstrates the use of single‐step recovery, an electrochemical process combining electrodeposition and electro‐dissolution, to recover lithiated transition metal oxides (LTMOs). The batteries produced through this recycling method perform similarly to batteries made from pristine materials.
Jarom G. Sederholm   +6 more
wiley   +1 more source

Fast‐Responding O2 Gas Sensor Based on Luminescent Europium Metal‐Organic Frameworks (MOF‐76)

open access: yesAdvanced Functional Materials, EarlyView.
Luminescent MOF‐76 materials based on Eu(III) and mixed Eu(III)/Y(III) show rapid and reversible changes in emission intensity in response to O2 with very short response times. The effect is based on triplet quenching of the linker ligands that act as photosensitizers. Average emission lifetimes of a few milliseconds turn out to be mostly unaffected by
Zhenyu Zhao   +5 more
wiley   +1 more source

Exponential stability of one-dimensional hyperbolic systems [PDF]

open access: hybrid, 2006
Farid Khodja Ammar   +1 more
openalex   +1 more source

Stochastically Generated Digital Twins of 3D Solid‐State Electrolyte Architecture

open access: yesAdvanced Functional Materials, EarlyView.
Digital Twins of random porous tape‐cast solid‐state battery architectures across µm to mm feature sizes from FIB‐SEM to X‐Ray µCT, respectively. Abstract Solid‐state lithium batteries (SSBs) have the potential to overcome conventional Li‐ion batteries in performance and safety.
Jonathan O'Neill   +3 more
wiley   +1 more source

Higher‐Order Temporal Dynamics in Complementary Charge Trap Memristor for High‐Dimensional Reservoir Computing

open access: yesAdvanced Functional Materials, EarlyView.
A complementary charge‐trap memristor (CoCTM) featuring a unique current transient with tunable overshoot‐relaxation dynamics is introduced for high‐resolution reservoir computing. By leveraging higher‐order temporal dynamics from engineered trapping layers, the device generates multiple output states from a single input, forming rich, high‐dimensional
Alba Martinez   +9 more
wiley   +1 more source

Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System

open access: yesAdvanced Functional Materials, EarlyView.
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang   +6 more
wiley   +1 more source

Selective and Precise Editing of Digital Polymers Through Parallel or Series Toehold‐Mediated Strand Displacement

open access: yesAdvanced Functional Materials, EarlyView.
A sequence‐encoded supramolecular construct containing two accessible toeholds is developed herein for enabling multiple editing operations. By introducing specific input strands, it is possible to selectively erase or rewrite digital content through parallel or series toehold‐mediated strand displacement (PTMSD or STMSD).
Jakub Ossowski   +3 more
wiley   +1 more source

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