Results 201 to 210 of about 610,121 (312)
Exponential stability criteria of uncertain systems with multiple time delays
Dengqing Cao, Ping He, Keyue Zhang
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Single‐Step Electrochemical Battery Recycling
This work demonstrates the use of single‐step recovery, an electrochemical process combining electrodeposition and electro‐dissolution, to recover lithiated transition metal oxides (LTMOs). The batteries produced through this recycling method perform similarly to batteries made from pristine materials.
Jarom G. Sederholm +6 more
wiley +1 more source
On the exponential stability of a class of nonlinear systems including delayed perturbations
Ju H. Park, Ho Youl Jung
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Fast‐Responding O2 Gas Sensor Based on Luminescent Europium Metal‐Organic Frameworks (MOF‐76)
Luminescent MOF‐76 materials based on Eu(III) and mixed Eu(III)/Y(III) show rapid and reversible changes in emission intensity in response to O2 with very short response times. The effect is based on triplet quenching of the linker ligands that act as photosensitizers. Average emission lifetimes of a few milliseconds turn out to be mostly unaffected by
Zhenyu Zhao +5 more
wiley +1 more source
Exponential stability of one-dimensional hyperbolic systems [PDF]
Farid Khodja Ammar +1 more
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Stochastically Generated Digital Twins of 3D Solid‐State Electrolyte Architecture
Digital Twins of random porous tape‐cast solid‐state battery architectures across µm to mm feature sizes from FIB‐SEM to X‐Ray µCT, respectively. Abstract Solid‐state lithium batteries (SSBs) have the potential to overcome conventional Li‐ion batteries in performance and safety.
Jonathan O'Neill +3 more
wiley +1 more source
A complementary charge‐trap memristor (CoCTM) featuring a unique current transient with tunable overshoot‐relaxation dynamics is introduced for high‐resolution reservoir computing. By leveraging higher‐order temporal dynamics from engineered trapping layers, the device generates multiple output states from a single input, forming rich, high‐dimensional
Alba Martinez +9 more
wiley +1 more source
Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang +6 more
wiley +1 more source
A sequence‐encoded supramolecular construct containing two accessible toeholds is developed herein for enabling multiple editing operations. By introducing specific input strands, it is possible to selectively erase or rewrite digital content through parallel or series toehold‐mediated strand displacement (PTMSD or STMSD).
Jakub Ossowski +3 more
wiley +1 more source

