Fast‐Responding O2 Gas Sensor Based on Luminescent Europium Metal‐Organic Frameworks (MOF‐76)
Luminescent MOF‐76 materials based on Eu(III) and mixed Eu(III)/Y(III) show rapid and reversible changes in emission intensity in response to O2 with very short response times. The effect is based on triplet quenching of the linker ligands that act as photosensitizers. Average emission lifetimes of a few milliseconds turn out to be mostly unaffected by
Zhenyu Zhao+5 more
wiley +1 more source
Distributed sliding mode control approach with adaptive spacing policy for vehicle platoons in communication interruption scenario. [PDF]
Wang J, Tong T, Cao J, Li S.
europepmc +1 more source
Stochastically Generated Digital Twins of 3D Solid‐State Electrolyte Architecture
Digital Twins of random porous tape‐cast solid‐state battery architectures across µm to mm feature sizes from FIB‐SEM to X‐Ray µCT, respectively. Abstract Solid‐state lithium batteries (SSBs) have the potential to overcome conventional Li‐ion batteries in performance and safety.
Jonathan O'Neill+3 more
wiley +1 more source
Resilient math inspired EDA optimized fuzzy adaptive exponent controller for LFC improvement of an EV integrated microgrid. [PDF]
Sahu PC+4 more
europepmc +1 more source
GLOBAL EXPONENTIAL STABILITY OF CLASSICAL SOLUTIONS TO THE HYDRODYNAMIC MODEL FOR SEMICONDUCTORS [PDF]
Daoyuan Fang, Jiang Xu, Ting Zhang
openalex +1 more source
A complementary charge‐trap memristor (CoCTM) featuring a unique current transient with tunable overshoot‐relaxation dynamics is introduced for high‐resolution reservoir computing. By leveraging higher‐order temporal dynamics from engineered trapping layers, the device generates multiple output states from a single input, forming rich, high‐dimensional
Alba Martinez+9 more
wiley +1 more source
Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang+6 more
wiley +1 more source
Exploring the chaotic, sensitivity and wave patterns to the dual-mode resonant Schrödinger equation: application in optical engineering. [PDF]
Muhammad J, Younas U, Yar M.
europepmc +1 more source