Results 231 to 240 of about 610,121 (312)
This review describes the different surface engineering strategies for quantum dots that addresses the challenges associated with surface defects, highlighting their role in enhancing the performance of solar energy conversion technologies. Abstract Colloidal quantum dots (QDs) have garnered significant attention for their unique potential in clean ...
Kokilavani S., Gurpreet Singh Selopal
wiley +1 more source
Colorimetric detection of chloroperoxyl radical in reactive chlorine species solutions. [PDF]
Kawata H +4 more
europepmc +1 more source
An ultra‐robust memristor based on SrTiO3‐CeO2 (S‐C) vertically aligned nanocomposite (VAN) achieving exceptional endurance of 1012 switching cycles via interface engineering. Artificial neural networks (ANNs) integrated with S‐C VAN memristors exhibit high training accuracy across multiple datasets.
Zedong Hu +12 more
wiley +1 more source
Nanoplasmonics Reveal Ionic‐Strength‐Driven Hydration of Nanoparticles
Localized surface plasmon resonance (LSPR) of gold nanoparticles (AuNPs) is modulated by ionic‐strength‐dependent hydration shell compression. A predictive model connects shell thickness to non‐radiative damping and spectral shifts over seven orders of magnitude.
Yeeun Song +4 more
wiley +1 more source
High-Order Exponentially Fitted Methods for Accurate Prediction of Milling Stability. [PDF]
Wu Y +5 more
europepmc +1 more source
Epitaxial Interface‐Driven Photoresponse Enhancement in Monolayer WS2–MoS2 Lateral Heterostructures
Surface potential distribution image, along with the derived electric field distribution across the interface, reveals that the electric field reaches its peak at the interface. Additionally, the spectral response of the heterointerface exhibits higher and broader features compared to its bare counterparts.
Pargam Vashishtha +18 more
wiley +1 more source
Enhanced Performance and In Situ TEM Investigation in High Entropy Alloy Electrode Based Memristors
This study utilizes in situ TEM, EDS, EELS, and APT to reveal switching in HEA/ZnO/Nb:STO RRAM. High diffusivity of Mn lowers the SET voltage to 1.5 V. Cr stabilizes the oxygen layer, while Fe, Co, and Ni stabilize the electrode. Based on these observations, the device achieves 30 ns switching, a 10⁷ memory window, and excellent endurance, being ...
Jing‐Yuan Tsai +10 more
wiley +1 more source
Dual-Filter X-Ray Image Enhancement Using Cream and Bosso Algorithms: Contrast and Entropy Optimization Across Anatomical Regions. [PDF]
Rienzo A +3 more
europepmc +1 more source

